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Heidelberg Instruments

MLA150

Lithography150mmHeidelberg Instruments MLA150 family
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The Heidelberg Instruments MLA150 is a mask-less aligner (direct-write lithography system) that exposes photoresist directly on a substrate using a UV laser (375 nm or 405 nm) without the need for a physical mask. The MLA150 achieves a minimum feature size of 1 µm. The MLA150 can also achieve feature sizes down to 600 nm.[1][2]

MLA150 — pnf.uchicago.edu
Fig. 01MLA150pnf.uchicago.edu[2]

  • Plate 01Heidelberg MLA150 Training - Pritzker Nanofabrication Facility

    Anna MukhortovaWatch on YouTube

  • Plate 02Multilayer lithography with the Maskless Aligner MLA150

    Nano Vacuum Pty LtdWatch on YouTube

  • Plate 03Photolithography without a mask: Multilayer lithography with the Maskless Aligner MLA 150

    Heidelberg InstrumentsWatch on YouTube

  • Plate 04Extract from EPFL User Interview: MLA 150 at the Center of MicroNanoTechnology (CMi) at EPFL

    Heidelberg InstrumentsWatch on YouTube

  • Plate 05MLA 150 Anniversary – Gregg Moore Shares a Story

    Heidelberg InstrumentsWatch on YouTube

  • Plate 06ASU Core Facilities Equipment Showcase: Heidelberg MLA 150

    Arizona State University ResearchWatch on YouTube

  • Plate 07MLA 150 Anniversary – Steffen Diez on How It All Began

    Heidelberg InstrumentsWatch on YouTube

Wafer size

150mm

Performance

Yes[1]

Optics

Mask-Less Aligner[1]

What it is

The Heidelberg Instruments MLA150 is a maskless aligner manufactured by Heidelberg Instruments GmbH. The system uses laser diodes at wavelengths of 375 and 405 nanometers. The MLA150 accommodates substrates up to 220 millimeters square and provides a maximum exposure area of 150 by 150 millimeters. Alignment accuracy is specified as less than 500 nanometers.[1][2][4]

How it works

The MLA150 employs a digital micromirror device to spatially modulate the exposure light from a laser source. The system uses interferometer-based position control for the moving stage. Autofocus is achieved through combined optical and pneumatic sensors that monitor the distance to the substrate surface. The MLA150 supports both topside and backside alignment through dedicated optics.[1][4]

Applications

Application areas for the MLA150 include life sciences, MEMS, micro-optics, semiconductor fabrication, sensors, actuators, MOEMS, and materials research involving nanotubes and graphene. The system can produce high-aspect-ratio features in thick photoresist and three-dimensional topography through grayscale mode.[2][1][4]

  • Direct writing of patterns onto wafers
  • Fast patterning of masks and wafers
  • Life Science
  • MEMS
  • Micro-Optics
  • Semiconductor
  • Sensors
  • Actuators
  • MOEMS
  • Material Research
  • Nano-Tubes
  • Graphene

Why won't it start?

Documented failure modes, common issues, and field considerations.

  • The source states a risk of crashing the writehead on small chips if the loading procedure is not followed accurately.
  • The source states the equipment is sensitive to airborne solvent contamination on optical elements.
  • The source states the sample must contain at least a 5 x 5 mm square for pneumatic autofocus to work correctly.

What do the numbers mean?

Wafer handling22

Minimum substrate size
5 x 5 x 0.1 mm[1]
Accurate?
Maximum substrate size
220 x 220 x 8 mm; 200 x 200 x 12 mm[1]
Accurate?
Substrate capacity
up to 8" x 8"[2]
Accurate?
Maximum substrate size (MLA150-1)
220 x 220 x 8 mm[1]
Accurate?
Maximum substrate size (MLA150-2)
200 x 200 x 12 mm[1]
Accurate?
Writing time with 405 nm laser (100 mm wafer, Fast mode)
< 9 min[1]
Accurate?
Writing time with 375 nm laser (100 mm wafer, Fast mode, MLA150-1)
< 32 min[1]
Accurate?
Writing time with 375 nm laser (100 mm wafer, Fast mode, MLA150-2)
< 9 min[1]
Accurate?
Substrate size (source2)
Up to 8" x 8"[2]
Accurate?
Maximum substrate size
220 x 220 x 8 mm (MLA150-1); 200 x 200 x 12 mm (MLA150-2)[1]
Accurate?
Maximum substrate size
8" x 8"[2]
Accurate?
Maximum substrate size
9-inch square or 200mm round[4]
Accurate?
Minimum substrate size
5 mm * 5 mm[3]
Accurate?
Write time (100 mm wafer, 405 nm fast mode)
< 9 min[1]
Accurate?
Write time (100 mm wafer, 405 nm fast mode)
9 minutes[2]
Accurate?
Write time (100 mm wafer, 375 nm fast mode) - MLA150-1
< 32 min[1]
Accurate?
Write time (100 mm wafer, 375 nm fast mode) - MLA150-2
< 9 min[1]
Accurate?
Write time (100 mm wafer typical)
about 30min[4]
Accurate?
Substrate thickness maximum
8 mm (MLA150-1); 12 mm (MLA150-2)[1]
Accurate?
Substrate size
Up to 8" x 8"[2]
Accurate?
Substrate size
Substrates up to 8" x 8"[2]
Accurate?
Direct-write exposure
Exposes the design directly onto a wafer without a photomask[2]
Accurate?

Optics & imaging33

Machine type
Mask-Less Aligner[1]
Accurate?
Light source
405 nm or 375 nm laser diodes[1]
Accurate?
Exposure area
150 x 150 mm[1]2 sources
Accurate?
Minimum feature size
down to 600 nm[2]
Accurate?
Exposure time at maximum write speed
9 minutes for 100 x 100 mm2; 16 minutes for 150 x 150 mm2[2]
Accurate?
Alignment accuracy
500 nm[2]
Accurate?
Minimum feature size (source2)
600 nm[2]
Accurate?
Uniformity
< 120 nm[1]
Accurate?
Front-side alignment accuracy
< 500 nm[1]
Accurate?
Back-side alignment accuracy (MLA150-2)
< 1000 nm[1]
Accurate?
Maximum exposure area
150 x 150 mm[1]2 sources
Accurate?
405 nm laser power
8000 mW[1]
Accurate?
375 nm laser power (MLA150-1)
2800 mW[1]
Accurate?
375 nm laser power (MLA150-2)
7200 mW[1]
Accurate?
Exposure time for 100x100 mm² (max write speed)
9 min[2]
Accurate?
Exposure time for 150x150 mm² (max write speed)
16 min[2]
Accurate?
Laser wavelengths
405 nm and 375 nm[2]
Accurate?
Exposure method
Non-contact[2]
Accurate?
Alignment accuracy
FSA < 500 nm; BSA < 1000 nm[1]
Accurate?
Maximum exposure area
150 x 150 mm2[2]
Accurate?
Light source
405 nm and 375 nm laser diodes[1]
Accurate?
Laser power (405 nm)
8000 mW[1]
Accurate?
Laser power (375 nm) - MLA150-1
2800 mW[1]
Accurate?
Laser power (375 nm) - MLA150-2
7200 mW[1]
Accurate?
Write grid (address unit) - High Quality
40 nm[4]
Accurate?
Write grid (address unit) - Fast Mode
100 nm[4]
Accurate?
Exposure method
Spatial light modulator (DMD) with continuously moving stage and continuous autofocus[4]
Accurate?
Type
Mask-less aligner[1]
Accurate?
Exposure source
405 nm or 375 nm laser diodes[1]
Accurate?
Maximum exposure area
6" x 6"[2]
Accurate?
Tool type
Mask-less aligner[1]
Accurate?
Backside alignment accuracy
< 1000 nm[1]
Accurate?
Exposure source
375 nm or 405 nm laser diodes[1]
Accurate?

Performance6

Top-side alignment
Yes[1]
Accurate?
Backside alignment
Yes[1]
Accurate?
Alignment accuracy
Global ≤ 500nm; Local ≤ 250nm[4]
Accurate?
Alignment accuracy
less than 500nm[3]
Accurate?
Alignment
Top-side and back-side alignment[1]
Accurate?
Alignment
Backside alignment[2]
Accurate?

Control & software1

Environment control
Temperature stabilization, charcoal filters[1]
Accurate?

Configuration & options17

OEM
Heidelberg Instruments GmbH[1]
Accurate?
Real-time autofocus
Yes[1]
Accurate?
Layout input formats
.gds, .cif, .dxf[1]
Accurate?
Minimum feature size
about 1 um[1]
Accurate?
Minimum feature size (source1)
1 µm[1]
Accurate?
Data input formats
Multiple standards (e.g., GDS, CIF, DXF)[1]
Accurate?
Autofocus
Real time, pneumatic[1]
Accurate?
Minimum feature size
1um[3]2 sources
Accurate?
Minimum feature size
~0.40µm line/space demonstrated[4]
Accurate?
Light source
405nm and 375nm[2]
Accurate?
Write time (150 x 150 mm)
16 minutes[2]
Accurate?
Write time (50 mm x 50 mm)
approx. 4 mins[3]
Accurate?
Linewidth variation (stitching)
≤100nm[4]
Accurate?
Grayscale capability
8-bit grayscale bitmap or layer-structured DXF[4]
Accurate?
High aspect ratio mode
Available (reduced NA for thick resists >100µm)[1]
Accurate?
Model
MLA150[1]
Accurate?
Minimum feature size
1 µm[1]
Accurate?

Vintage & configurations

Documented models & variants

DesignationGenerationVintageChangesSource
MLA150 - 1——Listed as one of the MLA150 system entries; source provides separate specifications for this unit.epfl.ch[1]
MLA150 - 2——Listed as one of the MLA150 system entries; source provides separate specifications and grayscale/high aspect ratio options for this unit.epfl.ch[1]
MLA150-1——Maximum substrate size 220 x 220 x 8 mm; 375 nm laser power 2800 mW; writing time with 375 nm laser on a 100 mm wafer is < 32 min (Fast mode).epfl.ch[1]
MLA150-2——Maximum substrate size 200 x 200 x 12 mm; 375 nm laser power 7200 mW; writing time with 375 nm laser on a 100 mm wafer is < 9 min (Fast mode); includes high aspect ratio and grayscale lithography features.epfl.ch[1]
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What replaced it?

Alternatives

Tools documented as functional equivalents — same process step and wafer size, from a different manufacturer. Each equivalence cites its source.

  • siblingHeidelberg Instruments VPG200— The source mentions the MLA150 as another Heidelberg laser writer installed in the CMi clean room; the Himt convert interface is similar for both. The MLA150 is mentioned as an alternative for exposing AZ10XT at 405 nm, which is forbidden on the VPG200.source[5]

Where are the manuals?

Publicly hosted documents referencing this tool, linked at their original location. Hosted by the linked institutions — availability may change.

Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.

Not publicly documented

Field notes

No research found yet — worked with this tool? Share what you know.

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Frequently asked questions

What exposure wavelengths are available?

The MLA150 uses laser diodes at 375 nm and 405 nm.[1][2]

What is the minimum resolvable feature size?

The MLA150 can achieve minimum feature sizes down to approximately 0.4 micrometers with thin photoresist, and features of 1 micrometer are readily obtained.[4][1]

Does the MLA150 support backside alignment?

Yes, the MLA150 includes backside alignment capability with a specified accuracy of less than 1000 nm.[1][4]

What is the typical exposure time for a 100 mm wafer?

With the 405 nm laser in fast mode, a 100 mm wafer can be exposed in less than 9 minutes.[1][2]

Not publicly documented

The following facts about the MLA150 are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.

  • No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the MLA150 are on record.

    Answerable by: OEM historical records or a trade-press announcement

  • The control-system platform and OS era of the MLA150 are not on record.

    Answerable by: an engineer who operated it or OEM installation records

  • The process node or technology generation of the MLA150 is not on record.

    Answerable by: an OEM datasheet or a fab qualification report

  • No publicly documented compatible parts, consumables, or accessories for the MLA150 are on record.

    Answerable by: an OEM parts catalog or a service engineer

Sources & citations

Sources (9)Every fact above is drawn from these public sources
  1. [1]epfl.ch — epfl.chepfl.ch
  2. [2]pnf.uchicago.edu — pnf.uchicago.edupnf.uchicago.edu
  3. [3]cns1.rc.fas.harvard.edu — cns1.rc.fas.harvard.educns1.rc.fas.harvard.edu
  4. [4]wiki.nanotech.ucsb.edu — wiki.nanotech.ucsb.eduwiki.nanotech.ucsb.edu
  5. [5]epfl.chepfl.ch
  6. [6]web.archive.orgweb.archive.org
  7. [7]UG07 Conversion Software Guide (APP) - MLA 150 [01424].pdf — nanocenter.umd.edunanocenter.umd.edu
  8. [8]UV direct write [HEIDELBERG-MLA] | Quantum-Nano Fabrication and Characterization Facility | University of Waterloo — uwaterloo.cauwaterloo.ca
  9. [9]Systemingenieur (m/w) für Laserlithographie-Systeme — himt.de (Aug 25, 2019)web.archive.org
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Last updated Oct 8, 2026.

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