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MLA150versusEBPG5000

Heidelberg Instruments MLA150, Raith EBPG5000, side by side. Every value shown is drawn from the cited encyclopedia entries.

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Side-by-side comparison of selected equipment models
Attribute
MLA150Heidelberg Instruments
EBPG5000Raith
OEMHeidelberg InstrumentsRaith
CategoryLithographyLithography
Wafer size150mm150mm
Process node—sub-10 nm
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyHeidelberg Instruments MLA150Raith EBPG5000
Cited variants
  • EBPG5000ES[2]
  • EBPG5200 (also known as EBPG5000 Plus)[3]
  • EBPG5200 (EBPG5000 Plus)[3]
Specifications
OEMHeidelberg Instruments GmbH[1]—
Machine typeMask-Less Aligner[1]—
Light source405 nm or 375 nm laser diodes[1]—
Exposure area150 x 150 mm[1]—
Top-side alignmentYes[1]—
Backside alignmentYes[1]—
Real-time autofocusYes[1]—
Layout input formats.gds, .cif, .dxf[1]—
Minimum feature sizeabout 1 um[1]less than 8 nm[3]
Minimum substrate size5 x 5 x 0.1 mm[1]—
Maximum substrate size220 x 220 x 8 mm; 200 x 200 x 12 mm[1]—
Substrate capacityup to 8" x 8"[4]—
Exposure time at maximum write speed9 minutes for 100 x 100 mm2; 16 minutes for 150 x 150 mm2[4]—
Alignment accuracy500 nm[4]—
Maximum substrate size (MLA150-1)220 x 220 x 8 mm[1]—
Maximum substrate size (MLA150-2)200 x 200 x 12 mm[1]—
Minimum feature size (source1)1 µm[1]—
Minimum feature size (source2)600 nm[4]—
Uniformity< 120 nm[1]—
Front-side alignment accuracy< 500 nm[1]—
Back-side alignment accuracy (MLA150-2)< 1000 nm[1]—
Maximum exposure area150 x 150 mm[1]—
405 nm laser power8000 mW[1]—
375 nm laser power (MLA150-1)2800 mW[1]—
375 nm laser power (MLA150-2)7200 mW[1]—
Writing time with 405 nm laser (100 mm wafer, Fast mode)< 9 min[1]—
Writing time with 375 nm laser (100 mm wafer, Fast mode, MLA150-1)< 32 min[1]—
Writing time with 375 nm laser (100 mm wafer, Fast mode, MLA150-2)< 9 min[1]—
Exposure time for 100x100 mm² (max write speed)9 min[4]—
Exposure time for 150x150 mm² (max write speed)16 min[4]—
Substrate size (source2)Up to 8" x 8"[4]—
Laser wavelengths405 nm and 375 nm[4]—
Exposure methodNon-contact[4]—
Data input formatsMultiple standards (e.g., GDS, CIF, DXF)[1]—
AutofocusReal time, pneumatic[1]—
Environment controlTemperature stabilization, charcoal filters[1]—
Laser power (405 nm)8000 mW[1]—
Laser power (375 nm) - MLA150-12800 mW[1]—
Laser power (375 nm) - MLA150-27200 mW[1]—
Write time (100 mm wafer, 405 nm fast mode)< 9 min[1]—
Write time (100 mm wafer, 375 nm fast mode) - MLA150-1< 32 min[1]—
Write time (100 mm wafer, 375 nm fast mode) - MLA150-2< 9 min[1]—
Write time (150 x 150 mm)16 minutes[4]—
Write time (100 mm wafer typical)about 30min[6]—
Write time (50 mm x 50 mm)approx. 4 mins[5]—
Linewidth variation (stitching)≤100nm[6]—
Write grid (address unit) - High Quality40 nm[6]—
Write grid (address unit) - Fast Mode100 nm[6]—
Grayscale capability8-bit grayscale bitmap or layer-structured DXF[6]—
High aspect ratio modeAvailable (reduced NA for thick resists >100µm)[1]—
Substrate thickness maximum8 mm (MLA150-1); 12 mm (MLA150-2)[1]—
ModelMLA150[1]—
TypeMask-less aligner[1]—
Exposure source405 nm or 375 nm laser diodes[1]—
AlignmentTop-side and back-side alignment[1]direct write mark detection and alignment software[2]
Substrate sizeUp to 8" x 8"[4]—
Tool typeMask-less aligner[1]Ebeam lithography tool/system[2]
Backside alignment accuracy< 1000 nm[1]—
Direct-write exposureExposes the design directly onto a wafer without a photomask[4]—
Feature capability—smaller than 10 nm features[2]
Placement accuracy—less than 20 nm[2]
Electron gun—100 keV thermal field emission gun[2]
Beam type—Gaussian beam[2]
Pattern generator—50 MHz[2]
Wafer holders—50 mm, 100 mm, and 150 mm wafers[2]
Mask holders—5 inch masks and smaller piece parts[2]
Writing capability—155 mm[3]
Maximum wafer size—up to 6 inches[3]
Maximum mask size—up to 6 inches[3]
Field size—variable field size to 1 mm at all kVs[3]
Acceleration voltage—100 keV[2]
Gun type—thermal field emission[2]
Pattern generator frequency—50 MHz[2]
Overlay accuracy—<20 nm[2]
Wafer sizes supported—50 mm, 100 mm, 150 mm[2]
Mask size supported—5 inch[2]
Temperature control—21°C ± 0.1°C[2]
Electron source type—Thermal Field Emission gun (TFE)[2]
Beam energy (EPFL EBPG5000ES)—100 keV[2]
Pattern generator frequency (EPFL EBPG5000ES)—50 MHz[2]
Minimum feature size (EPFL EBPG5000ES)—smaller than 10 nm[2]
Substrate support (EPFL EBPG5000ES)—holders for 50 mm, 100 mm, 150 mm wafers, 5‑inch masks and smaller piece parts[2]
Operating temperatures—21 °C ± 0.1 °C (cleanroom environment)[2]
Model identifier (UChicago)—Raith EBPG5200 E-Beam lithography system (also called EBPG5000 Plus)[3]
Wafer size (UChicago model)—up to 6″ wafers[3]
Mask size (UChicago model)—up to 6″ masks[3]
Minimum feature size (UChicago model)—less than 8 nm[3]
Operating voltages (UChicago model)—20, 50, and 100 kV[3]
Pattern generator frequency (UChicago model)—50 / 100 MHz[3]
Minimum feature (EPFL EBPG5000ES)—smaller than 10 nm[2]
Electron source (EPFL EBPG5000ES)—100 keV thermal field emission gun[2]
Pattern generator (EPFL EBPG5000ES)—50 MHz[2]
Substrate holders (EPFL EBPG5000ES)—50 mm, 100 mm, 150 mm wafers; 5-inch masks; smaller piece parts[2]
Cleanroom environment—custom cleanroom maintained at 21°C ± 0.1°C[2]
Minimum feature (PNF EBPG5200)—less than 8 nm[3]
Writing capability (PNF EBPG5200)—155 mm[3]
Substrate sizes (PNF EBPG5200)—wafers up to 6 in; masks up to 6 in[3]
Acceleration voltages (PNF EBPG5200)—20, 50, and 100 kV[3]
Pattern generator (PNF EBPG5200)—50 / 100 MHz[3]
Field size (PNF EBPG5200)—variable field size to 1 mm at all kVs[3]
Electron source (PNF EBPG5200)—Thermal Field Emission gun[3]
Feature size—smaller than 10 nm features[2]
Gun—100 keV thermal field emission gun[2]
Beam—Gaussian beam[2]
Holders—holders for 50 mm, 100 mm, and 150 mm wafers; 5 inch masks and smaller piece parts[2]
Wafer size—up to 6 inch wafers[3]
Mask size—up to 6 inch masks[3]
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Sources (6)Every fact above is drawn from these public sources
  1. [1]epfl.chepfl.ch
  2. [2]epfl.chepfl.ch
  3. [3]pnf.uchicago.edupnf.uchicago.edu
  4. [4]pnf.uchicago.edupnf.uchicago.edu
  5. [5]cns1.rc.fas.harvard.educns1.rc.fas.harvard.edu
  6. [6]wiki.nanotech.ucsb.eduwiki.nanotech.ucsb.edu