Waferpedia

ASML

5500

Lithography100mm248 nm (KrF) DUVProduced 1991–ASML 5500 family
Research Quality: 60% complete

ASML PAS 5500 is a wafer stepper lithography platform that was first shipped in 1991. ASML PAS 5500 includes variants using i-line (365 nm) and KrF (248 nm) light sources, such as the PAS 5500/60 and PAS 5500/300. ASML PAS 5500 is no longer made as new, but ASML has extended customer service of the product line to 2030 and beyond.[1][2][3]

ASML logo
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Wafer size

100mm

Produced

1991–

Node / era

248 nm (KrF) DUV

Optics

248 nm (KrF)[3]

What it is

The first PAS 5500 system was shipped in 1991, marking a key milestone in ASML's growth. The platform includes multiple wavelength variants: i-line (365 nm), krypton fluoride (KrF, 248 nm), and argon fluoride (ArF) models. The PAS 5500/200 is a 5x reduction i-line stepper with a resolution of 350 nm. The PAS 5500/300 is a 248 nm DUV stepper capable of sub-200 nm dense features and sub-150 nm isolated lines. The PAS 5500/60 is an i-line stepper with a minimum feature size of 450 nm.[3][1][4][2]

How it works

The PAS 5500/200 uses an i-line (365 nm) light source with a variable numerical aperture of 0.48–0.60. Maximum exposure field size on the wafer is 22 mm × 22 mm. Overlay accuracy is better than 50 nm. Alignment is achieved through reticle pre-alignment marks, reticle alignment marks, wafer zero-level marks, and global or field-by-field wafer alignment. The system uses through-the-lens alignment of the wafer and reticle.[4]

Where it fits in the process flow

Initially used for critical layers at leading-edge fabs, the PAS 5500 platform commonly migrates to less-critical layers as new generations of lithography tools are introduced. Many PAS 5500 systems have been refurbished and resold into the specialty semiconductor market (e.g., MEMS, sensors, RF devices), where advanced nodes are not required. The platform supports 4-inch, 6-inch, and 200-mm wafer sizes across different configurations.[1][3][4][2]

Applications

Specific applications documented for PAS 5500 systems include imaging for virtual reality technology, accelerometers, RF identification chips, and ultra-low-power devices. The stepper is capable of handling various photoresists, including positive and negative DUV resists, and can be used with bottom anti-reflective coatings (BARC) and underlayers.[1][3]

  • Deep-UV stepper photolithography
  • Imaging dense features below 200 nm
  • Imaging isolated line structures below 150 nm with effort
  • Multiple aligned pattern exposures from multiple masks/reticles in a single session

Why won't it start?

Documented failure modes, common issues, and field considerations.

  • Any wafer size other than 4-inch is difficult to work with.
  • Small mounted parts can have worse flatness and focus-related uniformity issues.
  • Edge bead on irregular pieces can reduce yield and uniformity.
  • Multi-layer alignment on mounted parts is difficult.

What do the numbers mean?

Wafer handling7

Configured wafer size
4 in wafers[3]
Accurate?
Maximum wafer size
4 in (100 mm) wafers with SEMI standard wafer flat (not notch)[3]
Accurate?
Sample size
100 mm wafers with SEMI std. major flat[3]
Accurate?
Wafer thickness
minimum approximately 200 µm; maximum approximately 1.1 mm[3]
Accurate?
Wafer Size (standard)
4 inch (100 mm)[3]
Accurate?
Throughput
Typically minutes per wafer (multiple 4-inch wafers)[3]
Accurate?
Wafer size (PAS 5500/300)
100 mm (4 inch) wafers with SEMI standard flat[3]
Accurate?

Optics & imaging17

Exposure wavelength
248 nm (KrF)[3]
Accurate?
Layer-to-layer overlay accuracy
better than 30 nm[3]
Accurate?
Minimum feature size
≤150 nm isolated lines; ≤200 nm dense patterns[3]
Accurate?
Full-field useable exposure area
intersection of a 31 mm diameter circle and a 22 mm x 27 mm rectangle[3]
Accurate?
Alignment accuracy
< 50 nm[3]
Accurate?
Minimum Feature Size (dense)
≤200 nm[3]
Accurate?
Minimum Feature Size (isolated lines)
≤150 nm[3]
Accurate?
Overlay Accuracy
Better than 30 nm[3]
Accurate?
Maximum Field Size (usable exposure area)
22 mm x 27 mm rectangle within a 31 mm diameter circle[3]
Accurate?
Numerical Aperture (variable)
0.48-0.60 (for /200 variant)[4]
Accurate?
Alignment Accuracy
< 50 nm (for /300 variant)[3]
Accurate?
Resolution (PAS 5500/300)
≤150 nm isolated lines, ≤200 nm dense patterns[3]
Accurate?
Exposure wavelength (PAS 5500/60)
365 nm[2]
Accurate?
Overlay accuracy (PAS 5500/300)
better than 30 nm[3]
Accurate?
Resolution (PAS 5500/200)
350 nm[4]
Accurate?
Numerical aperture (PAS 5500/200)
0.48-0.60 variable[4]
Accurate?
Minimum feature size (PAS 5500/60)
450 nm[2]
Accurate?

Configuration & options7

Manufacturer
ASML[3]
Accurate?
Model
PAS 5500/300[3]
Accurate?
Description
Deep-UV Stepper Photolithography[3]
Accurate?
Maximum dose
~100 mJ[3]
Accurate?
Reduction Ratio
5x (for some variants, e.g., /200 and /60)[4]
Accurate?
Reduction ratio (PAS 5500/60)
5:1[2]
Accurate?
Maximum field size (PAS 5500/200)
22x22 mm[4]
Accurate?

Vintage & configurations

  1. 1991Production start[1]

    The first-ever PAS 5500 platform was shipped in 1991.

Documented models & variants

DesignationGenerationVintageChangesSource
PAS 5500/300———wiki.nanotech.ucsb.edu[3]
PAS 5500/200i-line—Described as a 5x reduction, i-line stepper with 350nm resolution and 0.48-0.60 variable numerical aperture; the source notes a 200 mm wafer context and that higher resolution i-line, KrF, and ArF systems were later introduced in the PAS 5500 line.manualslib.com[4]
PAS 5500/60i-line—Described as an i-line system with automatic 100mm wafer cassette processing capability, 365nm near-UV light, 450nm minimum feature size, and 90nm alignment between lithographic layers.snfguide.stanford.edu[2]
PAS 5500/275i-line—Described as a refurbished and upgraded model offering resolutions down to 0.28 µm and throughput of up to 100 wafers per hour.asml.com[1]
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Where are the manuals?

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Not publicly documented

Field notes

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Frequently asked questions

What are the typical resolution capabilities of the PAS 5500 platform?

For the PAS 5500/200 i-line model, resolution is 350 nm. The PAS 5500/300 DUV model achieves sub-200 nm dense features and sub-150 nm isolated lines. The PAS 5500/60 i-line model has a minimum resolution of 450 nm.[3][4][2]

What exposure wavelengths does the PAS 5500 use?

The PAS 5500 platform includes i-line (365 nm), krypton fluoride (KrF, 248 nm), and argon fluoride (ArF) wavelength variants.[1][3][4]

What wafer sizes can the PAS 5500 handle?

Configurations exist for 4-inch (100 mm), 6-inch (150 mm), and 200-mm wafers. For example, the PAS 5500/300 is set up for 4-inch wafers, the PAS 5500/200 for 6-inch wafers, and some versions support 200 mm wafers.[3][4][2]

What is the overlay accuracy of the PAS 5500?

The PAS 5500/200 achieves overlay better than 50 nm. The PAS 5500/300 achieves layer-to-layer overlay better than 30 nm. The PAS 5500/60 has an alignment accuracy of 90 nm.[3][4][2]

When was the PAS 5500 platform first introduced?

The first PAS 5500 system was shipped on May 9, 1991.[1]

Not publicly documented

The following facts about the 5500 are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.

  • The control-system platform and OS era of the 5500 are not on record.

    Answerable by: an engineer who operated it or OEM installation records

  • No publicly documented compatible parts, consumables, or accessories for the 5500 are on record.

    Answerable by: an OEM parts catalog or a service engineer

  • No publicly hosted manuals, SOPs, or datasheets for the 5500 are on record.

    Answerable by: university cleanroom staff or an OEM application specialist

Sources & citations

Sources (4)Every fact above is drawn from these public sources
  1. [1]asml.com — asml.comasml.com
  2. [2]snfguide.stanford.edu — snfguide.stanford.edusnfguide.stanford.edu
  3. [3]wiki.nanotech.ucsb.edu — wiki.nanotech.ucsb.eduwiki.nanotech.ucsb.edu
  4. [4]manualslib.com — manualslib.commanualslib.com
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Last updated Oct 5, 2026.

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