Plasma-Therm
Versaline ICP
Provisional entry — research in progress
This page was generated automatically from cited public sources and hasn't completed the full research pass yet. Every specification shown carries its source; more detail is added as research completes.
What it is
The Plasma-Therm Versaline ICP is an inductively coupled plasma etching system manufactured by Plasma-Therm.[1][3][5]
The Versaline platform is a modular system configured to perform an array of etch and deposition processes for specialty semiconductor markets.[5]
How it works
The Versaline ICP etch platform uses a 2 MHz ICP source that is heated for process stability, reduced first wafer effects, and increased mean time between cleans.[5]
The system provides a 13.56 MHz RF power supply and an optional 40 MHz substrate bias.[5]
Substrate temperature is controlled with backside helium using either mechanical or electrostatic clamping.[5]
The system includes a Cortex control system and EndpointWorks software that supports laser, optical emission, and other system parameter-based endpoints.[5]
The Versaline platform’s modular design allows for flexible configuration of substrate handling, from single wafer or carrier loading with a loadlock to multi-chamber production clusters.[5][6]
Where it fits in the process flow
Applications
The Versaline ICP etch platform has a large process library for applications including wireless, photonics, power devices, compound semiconductors, memory, quantum, and advanced packaging.[5]
The system can etch II-VI and III-V materials such as GaAs, InP, GaN, AlN, CdTe, and InSb.[5]
The system can etch silicon-based materials including Si, poly-Si, and SiC.[5]
The system can etch dielectrics such as SiO₂, SiNx, SiON, quartz, and fused silica.[5]
The system can etch polymers including PR, PI, and BCB.[5]
The system can etch metals such as Al, Cr, V, W, Mo, Ti, Ta, Nb, Cu, Au, and Pt.[5]
The system can etch metal oxides and nitrides including TiN, TaN, TiOx, TaOx, and HfOx.[5]
The system can etch piezoelectrics such as LiNbO₃ and LiTaO₃.[5]
Corrosive chemistry such as HBr, Cl₂, and BCl₃ is supported with armored corrosion-resistant components.[5]
What do the numbers mean?
Power & electrical3
Wafer handling2
- Substrate Temperature Control
- Backside helium cooling with mechanical or electrostatic clamping[5]
Gas & chemistry1
Control & software1
Configuration & options1
- 4 Process Modules[3]
Vintage & configurations
Documented models & variants
| Designation | Generation | Vintage | Changes | Source |
|---|---|---|---|---|
| VERSALINE RIE | — | — | Reactive ion etch configuration; supports up to 200mm wafers; substrate bias 13.56MHz and optional 40MHz; no ICP source. | web.archive.org[5] |
| VERSALINE DSE | — | — | Deep silicon etch (DRIE) configuration; fast gas switching, notchless SOI etching, ARDE reduction, patented endpoint algorithms. | web.archive.org[5] |
| VERSALINE PECVD | — | — | Plasma enhanced chemical vapor deposition; silane-based and TEOS films; high-temperature electrode up to 500C; 100mm to 200mm substrates. | web.archive.org[5] |
| VERSALINE HDPCVD | — | — | High-density plasma CVD; low temperature (<180C) deposition; trench/gap fill; ICP source for dense films. | web.archive.org[5] |
| VERSALINE IBE | — | — | Ion beam etch; large-area ion sources; tilt angles; Marathon grids; <2% 3-sigma uniformity on 200mm. | web.archive.org[5] |
| VERSALINE IBD | — | — | Ion beam deposition; 6 or 8 target configurations; tilt angles; Marathon grids; <2% 3-sigma uniformity. | web.archive.org[5] |
What does it need to run?
Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.
Where are the manuals?
Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.
Not publicly documented
Field notes
No research found yet — worked with this tool? Share what you know.
Frequently asked questions
What types of etching can the Versaline system do?
The Versaline system can be configured for ICP RIE, Deep Silicon Etch (DSE), and Ion Beam Etch (IBE).[5]
What control system does the Versaline use?
The Versaline uses the Cortex control system.[5]
Can the Versaline handle corrosive gases?
Yes, corrosive chemistry such as HBr, Cl₂, and BCl₃ is supported with armored corrosion-resistant components.[5]
Not publicly documented
The following facts about the Versaline ICP are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the Versaline ICP are on record.
Answerable by: OEM historical records or a trade-press announcement
The control-system platform and OS era of the Versaline ICP are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the Versaline ICP are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the Versaline ICP is not on record.
Answerable by: an OEM datasheet or a fab qualification report
No publicly documented compatible parts, consumables, or accessories for the Versaline ICP are on record.
Answerable by: an OEM parts catalog or a service engineer
No research found yet — worked with this tool? Share what you know.
Sources & citations
Sources (6)Every fact above is drawn from these public sources
- [1]Inventory photo
- [2]Inventory photo
- [3]inventory listing
- [4]nanofab.ece.cmu.edu — nanofab.ece.cmu.edunanofab.ece.cmu.edu
- [5]web.archive.org — plasmatherm.com (May 15, 2026)web.archive.org
- [6]Plasma-Therm: VERSALINE — plasma-therm.com (Aug 16, 2021)web.archive.org
Last updated Sep 24, 2026.
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