Comparison ledger
Applied Materials 0010 47763, Plasma-Therm Versaline ICP, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010 47763Applied Materials | Versaline ICPPlasma-Therm |
|---|---|---|
| OEM | Applied Materials | Plasma-Therm |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010 47763 | Plasma-Therm Versaline ICP |
| Cited variants | — | |
| Specifications | ||
| Configuration | 2nd Source New[2] | 4 Process Modules[5] |
| Type | Monopolar Dual Heated[3] | — |
| Description | ASSY, ESC, BONDED, MONOPOLAR DUAL HEATED[4] | — |
| Possible Materials | Al2O3 (aluminum oxide) or AlN (aluminum nitride)[3] | — |
| Model | 0010-47763[2] | — |
| OEM | Applied Materials[2] | — |
| Material (possible) | Al2O3 (aluminum oxide) or AlN (aluminum nitride)[3] | — |
| Application | Fixing wafers in etching process (PVD, CVD, ETCH)[3] | — |
| Quantity available (source) | 1[3] | — |
| RF Power Supply | — | 500 W[6] |
| Wafer Size | — | 4" wafers or smaller samples mounted to 4" carrier wafers[6] |
| Gases Available | — | Cl2, BCl3, Ar, O2[6] |
| ICP Source Frequency | — | 2MHz[1] |
| Substrate Bias Frequency | — | 13.56MHz (optional 40MHz)[1] |
| Substrate Temperature Control | — | Backside helium cooling with mechanical or electrostatic clamping[1] |
| Control System | — | Cortex control system with EndpointWorks[1] |
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