Waferpedia

Oxford Instruments

plasmapro-ngp80-rie

Provisional entry — research in progress

This page was generated automatically from cited public sources and hasn't completed the full research pass yet. Every specification shown carries its source; more detail is added as research completes.

The PlasmaPro NGP80 RIE is a reactive ion etching system from Oxford Instruments. The PlasmaPro NGP80 RIE is used for reactive ion etching processes, such as etching SiO2 hard masks with CHF3/Ar plasma. The PlasmaPro NGP80 RIE is used at a temperature of 20°C for etching processes.[1][2]

Oxford Instrumentsplasmapro-ngp80-rie
No photo available yet

Wafer size

200mm

Gas delivery

CHF3/Ar plasma[1]

Optics

Etching of SiO2 hard mask[1]

How it works

The PlasmaPro NGP80 RIE was used with a CHF3/Ar plasma at a temperature of 20°C to etch silicon dioxide hard masks.[1][2]

What do the numbers mean?

Gas & chemistry2

Etch chemistry
CHF3/Ar plasma[1]
Accurate?
plasma chemistry
CHF3/Ar plasma[1]
Accurate?

Optics & imaging2

Typical application
Etching of SiO2 hard mask[1]
Accurate?
use
Etching SiO2 hard mask[1]
Accurate?

Configuration & options6

Equipment name
Oxford NGP80 RIE[3]
Accurate?
Tag/alias
Oxford-PlasmaPro-NGP80-RIE[3]
Accurate?
Process type
plasma etch[3]
Accurate?
Process type
Reactive ion etching (RIE)[1]
Accurate?
Process temperature
20°C[1]
Accurate?
use
Part of a silicon nanostructure fabrication flow[2]
Accurate?
Interested in this tool?
Need help with this tool?Embed spec card

What does it need to run?

Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.

  • Etch chemistryCHF3/Ar plasma[1]
  • plasma chemistryCHF3/Ar plasma[1]

Where are the manuals?

Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.

Not publicly documented

Field notes

No research found yet — worked with this tool? Share what you know.

Worked with this tool? Help preserve its knowledge →

Frequently asked questions

What types of materials can be etched with this class of RIE system?General reference — not yet source-verified

RIE systems can etch a wide range of thin films including dielectrics like silicon dioxide and silicon nitride, semiconductors such as silicon and gallium arsenide, and metals like aluminum and titanium. The specific chemistry and process conditions must be tuned for each material to achieve acceptable etch rates and selectivity.

How is the etch rate and uniformity controlled in such systems?General reference — not yet source-verified

Etch rate and uniformity are controlled by adjusting RF power, chamber pressure, gas flow rates, and electrode temperature. Uniformity can be optimized through careful chamber design, gas distribution, and temperature control. End-point detection and in-situ monitoring help maintain consistency across the wafer.

What maintenance or safety considerations apply to RIE equipment?General reference — not yet source-verified

RIE systems require periodic cleaning of the chamber to remove deposited byproducts, as well as inspection and replacement of consumable parts like O-rings and electrodes. Safety considerations include handling of toxic or corrosive process gases, high-voltage RF systems, and vacuum interlocks. Proper training and adherence to protocols are essential.

Not publicly documented

The following facts about the plasmapro-ngp80-rie are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.

  • No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the plasmapro-ngp80-rie are on record.

    Answerable by: OEM historical records or a trade-press announcement

  • No publicly documented variants, configuration options, or revision breakpoints of the plasmapro-ngp80-rie are on record.

    Answerable by: an OEM product catalog or an engineer who ordered or specified the tool

  • The control-system platform and OS era of the plasmapro-ngp80-rie are not on record.

    Answerable by: an engineer who operated it or OEM installation records

  • No publicly documented failure modes or field errata for the plasmapro-ngp80-rie are on record.

    Answerable by: a field service engineer, process engineer, or maintenance technician

  • The process node or technology generation of the plasmapro-ngp80-rie is not on record.

    Answerable by: an OEM datasheet or a fab qualification report

No research found yet — worked with this tool? Share what you know.

Sources & citations

Sources (3)Every fact above is drawn from these public sources
  1. [1]discovery.ucl.ac.uk — discovery.ucl.ac.ukdiscovery.ucl.ac.uk
  2. [2]eprints.gla.ac.uk — eprints.gla.ac.ukeprints.gla.ac.uk
  3. [3]confluence.nanofab.ualberta.ca — confluence.nanofab.ualberta.caconfluence.nanofab.ualberta.ca
Was this page accurate?

Last updated Oct 3, 2026.

Compare with similar tools

View all →