Lam Research
Rainbow 4520
The Lam Rainbow 4520 is a fully automated, in-line, single-wafer plasma/RIE etching system. The Lam Rainbow 4520 processes 6-inch or 8-inch wafers. The Lam Rainbow 4520 is part of the Lam Rainbow 45XX Series, which is mainly for oxide etch.[1]
Plate 01Lam Research Rainbow 4420 4520 4620 4720 4428 4528 4628 Plasma Etch Semiconductor Equipment
Peter ChenWatch on YouTubePlate 02Lam Research Lam Rainbow 4400 4500 4600 4420 4520 4620 4720 plasma etcher semiconductor equipment
SemiStarWatch on YouTubePlate 03Upgrade Kit for Lam Rainbow 4400 4500 4600 4700 4420 4520 4620 4720 Plasma Etcher RIE
Allwin21Watch on YouTube
Wafer size
8"
Power
≤5% of set points[1]
Vacuum
≤ 5 mT[1]
Performance
± 1 ℃[1]
Gas delivery
1-6 or 1-8 lines with MFC; maximum 9 lines[1]
What it is
General reference — not yet source-verifiedThe Lam Research Rainbow 4520 is a single-wafer reactive-ion etching system designed for semiconductor fabrication. Such systems use a combination of physical ion bombardment and chemical reactions to remove material from wafer surfaces.
How it works
The Rainbow 4520 uses top or bottom powered electrodes to create the plasma. The RF match networks at each electrode allow programmable switching between plasma mode and RIE mode. The electrode spacing is programmable. The system is computer-controlled, allowing either manual or automatic control.[1]
Applications
The Rainbow 4520 is mainly used for oxide etching. Proven applications include contact oxide etch with high selectivity to polysilicon, anisotropic via etch with N2 addition, oxide spacer etch, photoresist/oxide etchback planarization, SOG/oxide etchback planarization, tapered contact etch, in situ soft etch, anisotropic dielectric etch, and silicon nitride etch.[1]
- Oxide etch
- Contact oxide etch
- Anisotropic via etch
- Oxide spacer etch
- Photoresist/oxide etchback planarization
- SOG/oxide etchback planarization
- Tapered contact etch
- In situ soft etch
- Anisotropic dielectric etch
- Silicon nitride etch
What do the numbers mean?
Power & electrical6
- RF Match
- Unique RF match networks located at upper and lower electrodes for programmable switching between plasma and RIE modes[1]
- Thermal Output
- Etcher: 3.4K carried by water, 3.4k by exhaust, 7k dispersed; RF Cart: 7K carried by water, 7k dispersed; TCU: 4K carried by water, 1k dispersed[1]
Vacuum & pumping4
Wafer handling7
Gas & chemistry4
Performance1
Control & software2
Dimensions & facilities2
Configuration & options16
Vintage & configurations
Documented models & variants
| Designation | Generation | Vintage | Changes | Source |
|---|---|---|---|---|
| Lam Rainbow 45XX Series | — | — | Series described as a fully automated, in-line, single-wafer plasma/RIE etching system with programmable switching between plasma and RIE modes. | allwin21.com[1] |
What replaced it?
Alternatives
Tools documented as functional equivalents — same process step and wafer size, from a different manufacturer. Each equivalence cites its source.
- Oxford Instruments Plasmalab 80 Plus RIE— Same function class: Etch, 8"Compare in depthsource[1]
What does it need to run?
Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.
- Gases1-6 or 1-8 lines with MFC; maximum 9 lines[1]
- RF MatchUnique RF match networks located at upper and lower electrodes for programmable switching between plasma and RIE modes[1]
- Number of Gases1-6 or 1-8 lines MFC, maximum 9 lines[1]
- Typical GasesAr, CF4, CHF3, He, SF6, N2, NF3 (process dependent)[1]
- Base Pressure≤ 5 mT[1]
- MFC/RF/DC Precision≤5% of set points[1]
- Particle (Bare-Si, RF-Off)< 50 @0.3um[1]
- Power208V, 50/60Hz, 3 phase, 5 wires, WYE, 30A(Max), 23(Norm) for Etcher[1]
- Physical Dimensions (RF Cart)22"W x 32"D x 44"H, 250 lbs[1]
- ExhaustEtcher Cabinet: Draw CFM 300, H2O 0.5, House, 4 inch Duct; Etcher Gas Panel: Draw CFM 75, H2O 0.5, Scrubbed, possible hazard, 2 inch Duct[1]
- Cooling WaterR.F. Cart: 2±0.2 GPM, 85±5 PSI, 14~35°C, 3/8" ID fittings, <200 u; TCU: 6±0.5 GPM, 11~26°C, 1/2" ID fittings, <200 u[1]
- Nitrogen40±10 PSI and 90±10 PSI, CDA can also be used for R.F. Cart[1]
- Thermal OutputEtcher: 3.4K carried by water, 3.4k by exhaust, 7k dispersed; RF Cart: 7K carried by water, 7k dispersed; TCU: 4K carried by water, 1k dispersed[1]
- Process Gases1/4" VCR fittings, <0.05u filter[1]
Where are the manuals?
Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.
Not publicly documented
Field notes
No research found yet — worked with this tool? Share what you know.
Frequently asked questions
What is the base pressure of the chamber?
The base pressure is ≤5 mT.[1]
Is the system fully automated?
Yes, it is a fully automated, in-line, single-wafer system with computer control for manual or automatic operation.[1]
What RF generator is used?
The system uses an AE-RFG1250 RF generator or equivalent.[1]
What process gases are typical?
Typical gases include Ar, CF4, CHF3, He, SF6, N2, and NF3.[1]
Not publicly documented
The following facts about the Rainbow 4520 are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the Rainbow 4520 are on record.
Answerable by: OEM historical records or a trade-press announcement
The control-system platform and OS era of the Rainbow 4520 are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the Rainbow 4520 are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the Rainbow 4520 is not on record.
Answerable by: an OEM datasheet or a fab qualification report
No publicly documented compatible parts, consumables, or accessories for the Rainbow 4520 are on record.
Answerable by: an OEM parts catalog or a service engineer
No research found yet — worked with this tool? Share what you know.
Sources & citations
Sources (1)Every fact above is drawn from these public sources
- [1]allwin21.com — allwin21.comallwin21.com
Last updated Sep 21, 2026.
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