Comparison ledger
Tegal 6550, Tegal 903, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 6550Tegal | 903Tegal |
|---|---|---|
| OEM | Tegal | Tegal |
| Category | Etch | Etch |
| Wafer size | 100mm | 100mm |
| Process node | — | — |
| Introduced | 2000 | 2000 |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | 2000 Patent announcement · 2001 Order announced | — |
| Control system | — | — |
| Generation | — | — |
| Family | Tegal 6550 | Tegal 903 |
| Cited variants |
| |
| Specifications | ||
| Product type | etch reactor / plasma etch system[4] | — |
| Wafer size | 100mm–200mm[1] | 3", 100mm – 150mm[2] |
| Process target | non-volatile metal and metal oxide films[4] | — |
| Primary application | volume production of magnetic memory components such as MRAM and GMR devices[4] | — |
| Platform | full cluster tool technology[4] | — |
| Process capability | patented rinse-strip-rinse feature / process capability[4] | — |
| Chamber configuration | dual-chamber platform[5] | — |
| Plasma source | patented next-generation dual-frequency plasma source technology[4] | — |
| Plasma source (later material) | Spectra plasma source[5] | — |
| Available option | deposition shield[4] | — |
| Type | plasma etch reactor[4] | — |
| Processes | etching non-volatile metal and metal oxide films[4] | — |
| Plasma source technology | patented next-generation, dual-frequency plasma source technology[4] | — |
| Variant | Spectra plasma source[5] | — |
| Tool type | — | diode plasma etch tool[6] |
| Wafer size support | — | 75-150 mm round silicon and GaAs substrates; rectangular substrates from 100-125 mm on a side[6] |
| Reactors/materials | — | narrow gap RF diode reactor; plasma etch of silicon oxide and silicon nitride materials[2] |
| Reactor type | — | narrow gap RF diode reactor[2] |
| Materials | — | silicon oxide and silicon nitride[2] |
| Substrate range | — | 75–150 mm round silicon and GaAs substrates; rectangular substrates from 100–125 mm on a side[6] |
| Transport system | — | Production-proven transport system[6] |
| Round substrate range | — | 75-150 mm round silicon and GaAs substrates[6] |
| Rectangular substrate range | — | 100-125 mm on a side[6] |
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