Waferpedia

Comparison ledger

BA8 Gen4 ProversusMA200 Gen3

SUSS MicroTec BA8 Gen4 Pro, SUSS MicroTec MA200 Gen3, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
BA8 Gen4 ProSUSS MicroTec
MA200 Gen3SUSS MicroTec
OEMSUSS MicroTecSUSS MicroTec
CategoryLithographyLithography
Wafer size200mm200mm
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
GenerationGen4 ProGen3
FamilySUSS MicroTec BA8 Gen4 ProSUSS MicroTec MA200 Gen3
Specifications
Wafer sizeup to 200 mm[1]up to 200 mm[1]
Automation levelSemi-automated[1]—
ProcessesMask alignment, Bond alignment, Exposure, UV bonding, Fusion bonding, Micro- and Nanoimprinting, Selective plasma activation[1]—
Type—Automated system[1]
Process—Mask Alignment, Exposure[1]
Substrate type—Wafers and square substrates[2]
Exposure modes—Proximity, contact, soft contact, hard contact, and vacuum contact exposure[3]
Top-side alignment accuracy—0.5 µm[2]
Minimum proximity resolution—3.5 µm[2]
Minimum vacuum contact resolution—<0.8 µm[2]
Handling capability—Fragile, warped, or ultra-thin wafers down to 50 µm[2]
Mask management—Integrated mask library stores and manages multiple photomasks[2]

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Sources (3)Every fact above is drawn from these public sources
  1. [1]hilpert.chhilpert.ch
  2. [2]suss.comsuss.com
  3. [3]inseto.cominseto.com