Waferpedia

Comparison ledger

EG4versusTS2000-IFE

Electroglas EG4, MPI TS2000-IFE, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
EG4Electroglas
OEMElectroglasMPI
CategoryTest & ProbeTest & Probe
Wafer size200mm200mm
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyElectroglas EG4MPI TS2000-IFE
Cited variants—
Specifications
Typewafer prober[2]—
Wafer size200mm[2]—
Z-forceup to 150 kilograms[2]—
Z-driveprobe-centered Z-drive[2]—
Z-drive typeProbe centered Z-drive[2]—
Base tool—MPI TS2000-IFE 200-mm automated probe station[3]
Precision—micron precision[3]
Probe types in standard configuration—two RF probes of GSG, GSSG or GSGSG types[3]
Included instruments—microscope and digital camera[3]
Thermal chuck temperature range—-60°C to +200 °C[3]
Motion/control—probes, microscope, and chuck are automatically controlled in x, y, and z directions with optical feedback[3]
RF VNA—Anritsu 4-Port ME7838G vector network analyzer capable of a single sweep from 70 kHz to 220 GHz[3]
DC bias supply—up to 12 DC bias can be supplied by an Agilent 4156C probe station precision semiconductor parameter analyzer capable of +/-200 V, 0.5 A, and 100 V/us pulses[3]

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Sources (3)Every fact above is drawn from these public sources
  1. [1]web.archive.orgweb.archive.org
  2. [2]web.archive.orgweb.archive.org
  3. [3]cnf.cornell.educnf.cornell.edu