Waferpedia

Lam Research

AutoEtch 590 plasma etcher plasma etch semiconductor

The Lam AutoEtch 590 is an in-line cassette to cassette, fully automated, single wafer, double air-locked, parallel plate plasma etching system. The Lam AutoEtch 590 is designed for automatic plasma etching applications with cassette-to-cassette wafer transfer capability. The Lam AutoEtch 590 supports programmable process parameters including RF power, chamber pressure, gas flow control, electrode spacing, and multi-step process recipes.[1][2][3]

Lam Research logo
Fig. — Manufacturer logo, not a photo of this toolWikimedia Commons (see file page for license)

Wafer size

6"

Power

ENI OEM 12[1]

What it is

The Lam Research AutoEtch 590 is a plasma etching system for semiconductor wafer processing. The AutoEtch 590 is a cassette-to-cassette, fully automated, single-wafer, double-airlocked, parallel-plate plasma etching system.[1][3][2]

How it works

The AutoEtch 590 moves a wafer from a send cassette into an entrance station, through an entrance airlock, and into the process chamber. The wafer is then etched by a computer-controlled gas plasma discharge and transferred through an exit airlock to a receive cassette.[1][2]

The AutoEtch 590 uses closed-loop automatic control. The programmable process variables include operating pressure, RF power, electrode spacing, gas flow rates, and step-terminating modes.[1][2]

Where it fits in the process flow

The AutoEtch 590 sits in the etch segment of semiconductor manufacturing, where it removes selected film material after lithography has defined the pattern on the wafer. The tool transfers wafers between cassettes and the process chamber without exposing the chamber to ambient conditions during the etch cycle.[1][2][3]

What do the numbers mean?

Power & electrical4

Condition
AS IS condition(No chiller, no pump, With ENI OEM 12 RF Generator)[1]
Accurate?
Condition
AS IS condition(One chiller, no pump, With ENI OEM 12 RF Generator)[1]
Accurate?
RF Generator
ENI OEM 12[1]
Accurate?
Process parameters
RF power, chamber pressure, gas flow control, electrode spacing, and multi-step process recipes[3]
Accurate?

Wafer handling8

Wafer Size
4,5,6 inch capability.[1]
Accurate?
Wafer size
Lam AutoEtch 590 Wafer Belt Drive System[1]
Accurate?
Wafer Size Capability
4,5,6 inch[1]
Accurate?
Wafer Size Configuration
4 and 6 inch configuration without hardware change[4]
Accurate?
Wafer Handling
In-line cassette to cassette, fully automated, single wafer[1]
Accurate?
Wafer size capability
4, 5, 6 inch capability[1]
Accurate?
Process type
single wafer[1]
Accurate?
Wafer handling
cassette-to-cassette[1]
Accurate?

Gas & chemistry1

Gas Panel Capacity
Five gases independently, actual capacity six gases (two may share fifth flow controller)[1]
Accurate?

Control & software3

Display
CRT monitor display[1]
Accurate?
Control
Automatic, closed-loop feedback control, double keylocked[1]
Accurate?
Control architecture
automatic, closed-loop feedback control[1]
Accurate?

Configuration & options16

Model
Lam AutoEtch 590[1]
Accurate?
Category
Plasma Etch[1]
Accurate?
Original Equipment Manufacturer
Lam Research[1]
Accurate?
Valid Time
Subject to prior sale[1]
Accurate?
Lead Time
Ready to go[1]
Accurate?
Warranty
No.[1]
Accurate?
Refund
No.[1]
Accurate?
Inspection
Against appointment[1]
Accurate?
Model
Lam AutoEtch 590 SN1481[1]
Accurate?
Chamber Type
Double air-locked, parallel plate[1]
Accurate?
OEM
Lam Research[1]
Accurate?
Model
AutoEtch 590[1]
Accurate?
Automation
fully automated[1]
Accurate?
Chamber structure
double air-locked[1]
Accurate?
Plasma configuration
parallel plate[1]
Accurate?
Interlock
double keylocked[1]
Accurate?

Observed configurations

How individual machines were equipped when they appeared on the secondary market — as listed, per unit. These describe one specific machine, not the model in general.

Unit as listed[1]

  • One chiller
  • no pump
  • With ENI OEM 12 RF Generator
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What does it need to run?

Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.

  • ConditionAS IS condition(No chiller, no pump, With ENI OEM 12 RF Generator)[1]
  • ConditionAS IS condition(One chiller, no pump, With ENI OEM 12 RF Generator)[1]
  • RF GeneratorENI OEM 12[1]
  • Gas Panel CapacityFive gases independently, actual capacity six gases (two may share fifth flow controller)[1]
  • Process parametersRF power, chamber pressure, gas flow control, electrode spacing, and multi-step process recipes[3]

Where are the manuals?

Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.

Not publicly documented

Field notes

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Frequently asked questions

What transfer scheme does the AutoEtch 590 use?

The AutoEtch 590 uses cassette-to-cassette wafer transfer with automatic handling.[1][3]

What process architecture does the AutoEtch 590 use?

The AutoEtch 590 uses a parallel-plate plasma etching configuration with double airlocks.[1][2]

Which process variables are programmable on the AutoEtch 590?

The AutoEtch 590 has programmable operating pressure, RF power, electrode spacing, gas flow rates, and step-terminating modes.[1][2]

Not publicly documented

The following facts about the AutoEtch 590 plasma etcher plasma etch semiconductor are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.

  • No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the AutoEtch 590 plasma etcher plasma etch semiconductor are on record.

    Answerable by: OEM historical records or a trade-press announcement

  • No publicly documented variants, configuration options, or revision breakpoints of the AutoEtch 590 plasma etcher plasma etch semiconductor are on record.

    Answerable by: an OEM product catalog or an engineer who ordered or specified the tool

  • The control-system platform and OS era of the AutoEtch 590 plasma etcher plasma etch semiconductor are not on record.

    Answerable by: an engineer who operated it or OEM installation records

  • No publicly documented failure modes or field errata for the AutoEtch 590 plasma etcher plasma etch semiconductor are on record.

    Answerable by: a field service engineer, process engineer, or maintenance technician

  • The process node or technology generation of the AutoEtch 590 plasma etcher plasma etch semiconductor is not on record.

    Answerable by: an OEM datasheet or a fab qualification report

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Sources & citations

Sources (4)Every fact above is drawn from these public sources
  1. [1]dealer listingsemistarcorp.com
  2. [2]Lam AutoEtch 590 — sites.google.comsites.google.com
  3. [3]semistarcorp.com — semistarcorp.comsemistarcorp.com
  4. [4]semistarcorp.wixsite.comsemistarcorp.wixsite.com
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Last updated Oct 9, 2026.

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