Axcelis
NV 8250 HT Ion
The Axcelis NV 8250 HT is an ion implanter for 8-inch wafers. The NV 8250 HT operates on 208 VAC, 3-phase, 50/60 Hz power with a rating of 36 kVA.[1][2]
What it is
The Axcelis NV 8250 HT Ion is a semiconductor ion implantation tool manufactured by Axcelis. The NV 8250 HT Ion processes wafers with an eight-inch size. The NV 8250 HT Ion belongs to the Axcelis NV 8250 family. The electrical supply for the NV 8250 HT Ion is 208 VAC, three-phase, at 50/60 Hz. The power consumption of the NV 8250 HT Ion is 36 kVA. The input breaker of the NV 8250 HT Ion is rated at 100 A. The largest load of the NV 8250 HT Ion is 88 A. The maximum interrupt capacity of the NV 8250 HT Ion is 85 A.[1][2]
How it works
Where it fits in the process flow
General reference — not yet source-verifiedThe NV 8250 HT Ion is used in the doping step of semiconductor device fabrication. The implant step follows patterning of the wafer with a resist mask and precedes an activation anneal. Ion implantation is applied to wafers in a cleanroom environment where particles and contamination are controlled.
Applications
General reference — not yet source-verifiedApplications of ion implantation include the formation of source and drain regions in field-effect transistors. The technique is also used to form wells, to adjust threshold voltages, and to dope gate materials. Ion implantation supports fabrication of logic, memory, and power semiconductor devices.
Why won't it start?
Documented failure modes, common issues, and field considerations.
- Two parts on the lower lock are worn out, resulting in slight play while moving.
- Possible vacuum and particle issue (internal, not external).
- Pneumatic block in the terminal has a broken input line.
- No CDA pressure to move valve.
What do the numbers mean?
Power & electrical4
- 50/60 Hz[1]
Vacuum & pumping3
Wafer handling1
Gas & chemistry1
- Gas Box with SDS Bottles[1]
Configuration & options16
What replaced it?
Alternatives
Tools documented as functional equivalents — same process step and wafer size, from a different manufacturer. Each equivalence cites its source.
- Applied Materials E 500 EHPI Medium Current— Same function class: Ion Implantation, UnknownCompare in depthsource[1]
- Applied Materials HEXP VIISta HE— Same function class: Ion Implantation, UnknownCompare in depthsource[1]
- Applied Materials 9500 XR Ion— Same function class: Ion Implantation, UnknownCompare in depthsource[1]
- Applied Materials VIISTA Trident XP Ion Implant— Same function class: Ion Implantation, UnknownCompare in depthsource[1]
What does it need to run?
Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.
Where are the manuals?
Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.
Not publicly documented
Field notes
No research found yet — worked with this tool? Share what you know.
Frequently asked questions
What are the typical energy ranges for ion implanters used in semiconductor manufacturing?General reference — not yet source-verified
Ion implanters are generally available in low-energy (for shallow implants), medium-energy, and high-energy (deep implants) variants. The specific energy range depends on the machine class and intended applications.
How does an ion implanter achieve uniform doping across a wafer?General reference — not yet source-verified
Uniformity is achieved by scanning the ion beam across the wafer surface using electrostatic or magnetic deflectors, often combined with wafer rotation or translation. Precise control of beam current, scan speed, and dwell time ensures consistent dopant distribution.
What maintenance is required for an ion implantation system?General reference — not yet source-verified
Regular maintenance includes replacing ion source components (filaments, electrodes), cleaning acceleration columns and vacuum chambers, monitoring beam optics, and calibrating dosimetry systems. Preventive maintenance intervals depend on usage and tool design.
What factors influence the throughput of an ion implantation system?General reference — not yet source-verified
Throughput is affected by beam current (higher current allows faster dosing), implantation energy (higher energy may reduce beam current), wafer size, required dose, and the number of implants per device. Tool design and automation also play significant roles.
Not publicly documented
The following facts about the NV 8250 HT Ion are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the NV 8250 HT Ion are on record.
Answerable by: OEM historical records or a trade-press announcement
No publicly documented variants, configuration options, or revision breakpoints of the NV 8250 HT Ion are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the NV 8250 HT Ion are not on record.
Answerable by: an engineer who operated it or OEM installation records
The process node or technology generation of the NV 8250 HT Ion is not on record.
Answerable by: an OEM datasheet or a fab qualification report
No publicly documented compatible parts, consumables, or accessories for the NV 8250 HT Ion are on record.
Answerable by: an OEM parts catalog or a service engineer
Sources & citations
Sources (3)Every fact above is drawn from these public sources
- [1]Inventory photo
- [2]waferpedia.com — waferpedia.comwaferpedia.com
- [3]Inventory photo
Last updated Oct 10, 2026.
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The Applied Materials 9500 XR Ion is an 8-inch high-current ion implanter that uses gases BF3, AS, and P, and was manufactured around 1996.
The Applied Materials HEXP VIISta HE is an ion implantation tool for 200mm wafers.
Applied Materials / Varian VIISTA Trident XP Ion Implant System is an ion implant system with a standard process type and an XP beamline.
The Applied Materials / Varian E 500 EHPI is a medium current implanter with a 6 inch wafer size.