Axcelis
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The Axcelis GSD 200 E 2 is a high current ion implanter. The Axcelis GSD 200 E 2 operates at 180 KeV. The Axcelis GSD 200 E 2 processes 8-inch wafers.[1]

An ion implanter accelerates charged dopant ions and directs them into a wafer surface to alter electrical properties in selected regions.
A high current ion implanter emphasizes delivery of a large ion beam current for doping steps that need substantial implanted dose.
Ion implantation is a front-end wafer doping step in semiconductor manufacturing.
Ion implantation typically follows pattern definition and resist or mask preparation and precedes thermal steps that activate or repair the implanted region.
Ion implanters are used to form doped regions in silicon and other semiconductor substrates.
High current implantation is used for semiconductor doping steps that require substantial implanted dose.
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The following facts about the GSD 200 E 2 are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the GSD 200 E 2 are on record.
Answerable by: OEM historical records or a trade-press announcement
No publicly documented variants, configuration options, or revision breakpoints of the GSD 200 E 2 are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the GSD 200 E 2 are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the GSD 200 E 2 are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the GSD 200 E 2 is not on record.
Answerable by: an OEM datasheet or a fab qualification report
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Last updated Oct 7, 2026.
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