Axcelis
GSD 100
The Axcelis GSD 100 is a high-current ion implanter. The GSD 100 handles 6-inch wafers. The GSD 100 has an energy range of 160 keV.[1][2]
What it is
The Axcelis GSD 100 is an ion implantation system used in semiconductor manufacturing. The machine is configured as a high-current implanter of the GSD 200 E type. The GSD 100 handles wafers of 6 inch size.[1][2]
The GSD 100 is part of the Axcelis NV GSD 100 family of ion implantation tools. The system operates with a 3-phase, 208 V electrical input and a 160 kV output rating. Power consumption is rated at 50 kVA and beam current at 15 mA. The tool includes features such as an electron shower, direct drive, Cell V6 control, Solaris, and an SDS gas box.[3]
How it works
The implanter is built with a direct rotary drive wafer handling architecture. Wafers are processed using a NV-GSD 200 series process disk with active cooling and a chiller. The loading configuration is open cassette with four-cassette compatibility. Automatic flat or notch alignment is provided with a buffer cassette.[1][2]
Where it fits in the process flow
The GSD 100 accepts 6 inch wafers and is configured with a processing disk that provides active cooling for temperature control during implant. The process disk and chiller arrangement helps manage wafer heating during high-dose implants. The tool is not configured with an in-situ wafer charge monitor or an in-situ particle detector.[1][2]
Why won't it start?
Documented failure modes, common issues, and field considerations.
- Can't produce wafers as is
- No Modifications
- No SECS II Interface
- No fab starter kit
- No fast maintenance kit
- No wafer top-side bar reading
- No real time dose control
- No real time beam profiler
- No electron shower with gas bleed and closed loop control
- No Slot-to-Slot Wafer Integrity (200 mm only)
- No Two Axis Variable Implant Angle (+/- 11 Degrees in two axis) (Quad Implant Capability)
- No Clean room manuals
- No CE Mark
- No OEM Audit available
- No enhanced low energy beamline
- No triple index mass analysis magnet & power supply
- No vaporizer
- No variable aperture extraction electrode
- No three position resolving aperture (90 keV only)
- No In-Situ wafer charge monitor
- No In-Situ particle detector HYT
- No lead floor
- No vacuum pumps
What do the numbers mean?
Power & electrical1
Vacuum & pumping7
Wafer handling11
Gas & chemistry7
Control & software4
- GEM / SECS Interface[1]
Dimensions & facilities1
Configuration & options31
What does it need to run?
Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.
- Cryo compressorsCTI 9600[1]
- Beamline PumpCTI Onboard 10[1]
- End Station Cryo PumpCTI Onboard 8[1]
- Source Turbo PumpSTP A 2203 C 2[1]
- Gas ConnectionsAr, N2[1]
- Source Turbo Pump (P1)STP A 2203 C 2[1]
- Beam Line Cryo Pump (P3)CTI Onboard 10[1]
- End Station Cryo Pump (P2)CTI Onboard 8[1]
- ArTylan FC-2900 MEP, 5 SCCM[1]
- Ar MFCTylan FC-2900 MEP, 5 SCCM[1]
- BF3 GasUnit 1660 (SDS), 5 SCCM[1]
- AsH3 GasUnit 1660 (SDS), 5 SCCM[1]
- PH3 GasUnit 1660 (SDS), 5 SCCM[1]
- Electrical Input3-phase, 208 V[2]
- SDS Gas BoxYes[3]
Where are the manuals?
Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.
Not publicly documented
Field notes
No research found yet — worked with this tool? Share what you know.
Frequently asked questions
How does the beam current affect the performance of a medium-current implanter?General reference — not yet source-verified
Beam current in medium-current implanters is balanced between throughput and the ability to achieve low-dose, high-precision implants. Higher beam current allows faster processing but can lead to wafer heating or charge buildup, while lower currents are used for very shallow, low-dose implants.
What maintenance is typically needed for an ion implanter?General reference — not yet source-verified
Routine maintenance includes replacing ion source filaments or components, cleaning extraction electrodes, calibrating beam diagnostics, and servicing vacuum pumps. The frequency depends on the usage and the specific ion species.
What safety precautions are required when operating an ion implanter?General reference — not yet source-verified
Operators must follow strict safety protocols for high voltage, toxic gas handling (for the ion source), and X-ray shielding. Interlocks, exhaust systems, and proper personal protective equipment are mandatory.
Not publicly documented
The following facts about the GSD 100 are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the GSD 100 are on record.
Answerable by: OEM historical records or a trade-press announcement
No publicly documented variants, configuration options, or revision breakpoints of the GSD 100 are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the GSD 100 are not on record.
Answerable by: an engineer who operated it or OEM installation records
The process node or technology generation of the GSD 100 is not on record.
Answerable by: an OEM datasheet or a fab qualification report
No publicly documented compatible parts, consumables, or accessories for the GSD 100 are on record.
Answerable by: an OEM parts catalog or a service engineer
Sources & citations
Sources (3)Every fact above is drawn from these public sources
- [1]Inventory photo
- [2]waferpedia.com — waferpedia.comwaferpedia.com
- [3]waferpedia.com — waferpedia.comwaferpedia.com
Last updated Oct 10, 2026.
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