Applied Materials
The Applied Materials P5000 is a PECVD system designed for dielectric deposition. The Applied Materials P5000 has two dedicated chambers: one for TEOS-based silicon dioxide and one for silane/ammonia-based silicon nitride. The Applied Materials P5000 can process wafers up to 8 inches in diameter and operates at nominal temperature around 400°C.[1]

Plate 01AMAT P5000 PECVD Nitride 2 Chambers
Wafer size
150mm
Gas delivery
TEOS/O2[1]
Both chambers can process wafers up to 8 inches in diameter and deposit films multiple microns thick.[1]
The tool is used for dielectric PECVD, silicon dioxide deposition with TEOS/O2 chemistry, and silicon nitride deposition with SiH4/NH3 capability.[1]
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It can deposit silicon dioxide and silicon nitrides.[1]
Both chambers can process wafers up to 8 inches.[1]
The nominal operating temperature is about 400 C.[1]
It has two dedicated chambers for dielectric PECVD.[1]
The following facts about the P5000 are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the P5000 are on record.
Answerable by: OEM historical records or a trade-press announcement
No publicly documented variants, configuration options, or revision breakpoints of the P5000 are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the P5000 are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the P5000 are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the P5000 is not on record.
Answerable by: an OEM datasheet or a fab qualification report
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Last updated Sep 21, 2026.
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