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Comparison ledger

160 XP IonversusE 500 High Current

Varian 160 XP Ion, Varian E 500 High Current, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
OEMVarianVarian
CategoryIon ImplantationIon Implantation
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyVarian 160 XP IonVarian E 500 High Current
Specifications
Configuration150mm High Current IMP[1]System Vacuum:[2]
Signal Tower—Front (Red, yellow, green)[2]
Production Wafer Qty'—1 wafer (single platen)[2]
Platen Type—Electrostatic Clamp[2]
Loadloack—Left/Right 2 Chambers[2]
S/w version—13.30 Rev C[2]
Implant Monitor—LCD Touchscreen[2]
Service Monitor—LCD Touchscreen[2]
Ion Source Chambe—CCIG/Torr[2]
Beamline Chamber—CCIG/Torr[2]
End Station Chamber—CCIG/Torr[2]
Source Dry Punp—iQDP 80[2]
Stage Pump—iQDP 80+QMB 500[2]
Loadlock Rough Pump—iQDP 80[2]
Loadlock Turbo Pump—CT 4 L & CT 4 R: P/N: 8108998G001 & 8108999G001[2]
Process Chamber—CT 250 P/N: 8039113[2]
Source Turbo Pump—Pfeiffer TPH 1201 P / P/N: PMP 03702[2]
Resolver Turbo Pump—Pfeiffer HiPace 300[2]
Beamline Turbo Pump—Pfeiffer HiPace 700Gas Box Upgrade:[2]

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Sources (2)Every fact above is drawn from these public sources
  1. [1]waferpedia.comwaferpedia.com
  2. [2]inventory listing