Comparison ledger
Tegal 6520, Tegal 6540, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 6520Tegal | 6540Tegal |
|---|---|---|
| OEM | Tegal | Tegal |
| Category | Etch | Etch |
| Wafer size | 100mm | 100mm |
| Process node | — | down to 90nm |
| Introduced | 2001 | — |
| Production run | 2001– | — |
| Lifecycle | — | — |
| Lifecycle milestones | 2001 Order announcement | — |
| Control system | — | — |
| Generation | — | — |
| Family | Tegal 6520 | Tegal 6540 |
| Cited variants | — |
|
| Specifications | ||
| Tool type | high-density CCP plasma etch tool[2] | — |
| RF power | dual-frequency RF power application[2] | dual-frequency RF power application[1] |
| Plasma confinement | magnetic plasma confinement[2] | magnetic plasma confinement[5] |
| Wafer size | 100mm – 200mm[2] | 100mm – 200mm[1] |
| Process capability | Rinse-Strip-Rinse (RSR)[3] | — |
| Type | — | high-density plasma etch system[5] |
| Reactor | — | HRe reactor / HRe™ reactor[5] |
| Plasma technology | — | dual-frequency RF power technology / dual-frequency RF power application[5] |
| Optimized design rule | — | down to 0.13 micron[5] |
| Design rule | — | optimized for device design rules down to 90nm[1] |
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