Comparison ledger
Plasma-Therm 770, STS Multiplex ICP, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 770Plasma-Therm | |
|---|---|---|
| OEM | Plasma-Therm | STS |
| Category | Etch | Etch |
| Wafer size | 100mm | 100mm |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | DOS |
| Generation | — | — |
| Family | Plasma-Therm 770 | STS Multiplex ICP |
| Specifications | ||
| Manufacturer | Plasmatherm (Unaxis)[2] | — |
| Model | Plasma-Therm 770 SLR series[2] | Multiplex ICP[5] |
| Tool type | Dry Etch[2] | load-locked, inductively coupled plasma etch system[1] |
| System type | Fluorine-based ICP etcher with loadlock[2] | — |
| Plasma source | Inductively Coupled Plasma (ICP) coil[2] | — |
| Substrate bias | Capacitively coupled substrate RF supply[2] | — |
| ICP coil power | 1000 W at 2 MHz[2] | — |
| Substrate bias power | 500 W at 13.56 MHz[2] | — |
| Available gases | C4F8, SF6, O2, Ar, N2, CHF3, CF4[2] | — |
| Backside cooling | Helium backside cooling[2] | Helium[1] |
| Chuck temperature | 10°C standard[2] | — |
| Wafer handling | Single 100 mm / 4-inch wafer handling with physical topside clamp contacting the outer 5 mm of the wafer[2] | smaller wafers and irregularly shaped samples placed on a 100 mm carrier[1] |
| Control system | Windows-based computer control of process and wafer handling[2] | — |
| Endpoint monitoring | In-situ laser monitor with camera and simulation software[2] | — |
| Number of MFC gas controllers | 8[3] | — |
| Gases (chlorine configuration) | N₂, O₂, CHF₃, AR, CH₄, CL₂, BCL₃, CF₄[3] | — |
| Wafer size range (with appropriate kit) | 2" to 8"[3] | — |
| Gases (previous usage, chlorine configuration) | N₂, O₂, He, CHF₃, Cl₂, BCl₃[4] | — |
| Process | — | deep silicon etching using the Bosch process[1] |
| Process gases | — | SF6, C4F8, O2, Ar[1] |
| Wafer size | — | 100 mm wafers[1] |
| Carrier requirement | — | Wafers smaller than 100 mm and irregularly shaped samples must be placed on a 100 mm carrier[1] |
| Platen size | — | 100 mm[1] |
| ICP power range | — | 0–900 Watts[1] |
| Bias power range | — | 0–30 Watts[1] |
| MFC flow range - SF6 | — | 0–300 sccm[1] |
| MFC flow range - C4F8 | — | 0–200 sccm[1] |
| MFC flow range - O2 | — | 0–100 sccm[1] |
| MFC flow range - Ar | — | 0–100 sccm[1] |
| Pressure range | — | < 90 mTorr[1] |
| Clamping | — | Clamped[1] |
| Selectivity to photoresist | — | 50:1[1] |
| Selectivity to wet thermal SiO2 | — | 100:1[1] |
| Typical repeatable aspect ratio | — | 10:1[1] |
| OEM | — | STS[5] |
| Wafer Size | — | 4 inches and 6 inches wafers[5] |
| Plasma Type | — | Inductively Coupled Plasma (ICP)[5] |
| RF Frequency (ICP source) | — | 13.56 MHz[5] |
| Substrate Bias Power (maximum) | — | 300 W[5] |
| Substrate Chuck Temperature | — | 20°C[5] |
| Substrate Clamping | — | Electrostatic clamping[5] |
| Load Lock Type | — | Transfer loadlock with high vacuum during loading/unloading[5] |
| Materials Etched | — | Insulators (SiO2, Si3N4, SiC), silicon, metals (Al Alloys, Pt, Ti), some polymers[5] |
| Type | — | load-locked inductively coupled plasma etch system[1] |
| Mask materials | — | photoresist and silicon dioxide (SiO2)[1] |
| Applications | — | etching insulators, silicon, metals, and some polymers[5] |
| Dedicated etch materials at CMi | — | metals, quartz, and polyimide[5] |
| Chuck | — | biasing chuck controlled in temperature[5] |
| Temperature control | — | 20°C[5] |
| Wafer sizes supported | — | 4 inches and 6 inches[5] |
| Max RF generator power | — | 300 W[5] |
| Control software | — | entirely computer controlled[5] |
| Endpoint detection | — | fitted with an End Point Detection (EPD) system[5] |
| Substrate holder RF biasing power | — | 300 W maximum[5] |
| Number of gas MFCs | — | 8[5] |
| Pumping system | — | 1000 l/s turbo pump[5] |
| Base pressure (without process) | — | few 10^-7 mb[5] |
| Wafer clamping | — | Electrostatic clamping with helium backside cooling[5] |
| End Point Detection | — | Yes[5] |
| Etching materials (general) | — | Insulators (SiO2, Si3N4, SiC), silicon, metals (Al alloys, Pt, Ti), polymers[5] |
| Al etch rate (standard Cl2/BCl3 process) | — | 0.2 to 0.5 um/min[5] |
| Si etch rate (standard Cl2 process) | — | 0.35 um/min[5] |
| Polyimide etch rate (oxygen chemistry) | — | >1 um/min[5] |
| Chemistry | — | chlorine and bromine chemistry[6] |
| Compatibility | — | microelectronic compatible equipment[6] |
| Chuck type | — | Electrostatic clamping and biasing chuck[5] |
| Wafer compatibility | — | Adaptable for 4 inches and 6 inches wafers[5] |
| Control | — | Entirely computer controlled[5] |
| End point detection | — | End Point Detection (EPD) system[5] |
| Bias RF power maximum | — | 300 W maximum[5] |
| ICP source | — | Antenna connected to an RF power supply and wrapped around an alumina cylinder[5] |
Plan your fab
Building a Etch process? Get a complete equipment list.
Open the fab equipment planner →