Comparison ledger
Oxford Instruments PlasmaPro100, Tegal 6510, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | PlasmaPro100Oxford Instruments | 6510Tegal |
|---|---|---|
| OEM | Oxford Instruments | Tegal |
| Category | Etch | Etch |
| Wafer size | 100mm | 100mm |
| Process node | — | down to 90nm |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Oxford Instruments PlasmaPro100 | Tegal 6510 |
| Specifications | ||
| OEM | Oxford[1] | — |
| Model | PlasmaPro100[1] | — |
| Equipment type | dry etcher[1] | — |
| Plasma source | ICP plasma etcher[1] | — |
| Wafer size | 100mm wafers[1] | 100mm – 200mm[2] |
| Chemistry | chlorine and bromine chemistry[1] | — |
| Clamping | electrostatic clamping[1] | — |
| Compatibility | microelectronic compatible equipment[1] | — |
| Applications | metals etching; deep polymer etching; Si, SiO2 and Si3N4 thin films etching[1] | — |
| Endpoint detection | laser reflectometry/interferometry and optical emission spectroscopy (EOS) endpoint detection[1] | — |
| Tool type | ICP plasma etcher[1] | high-density CCP plasma etch tool[2] |
| End-point detection | laser reflectometry/interferometry end-point-detection[1] | — |
| RF power | — | dual-frequency RF power application[2] |
| Plasma confinement | — | magnetic plasma confinement[2] |
| Configuration | — | one or two HRē etch modules on a high-vacuum cluster platform[2] |
| Optimization node | — | optimized for device design rules down to 90nm[2] |
| Process type | — | High-density CCP plasma etch[2] |
| RF configuration | — | Dual-frequency RF power application[2] |
| Magnetic confinement | — | Yes[2] |
| Modules | — | One or two HRe etch modules on a high-vacuum cluster platform[2] |
| Design rule | — | 90nm[2] |
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