Comparison ledger
Nikon 1505 G 6 E, Raith EBPG5150, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 1505 G 6 ENikon | EBPG5150Raith |
|---|---|---|
| OEM | Nikon | Raith |
| Category | Lithography | Lithography |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | 1988– | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Nikon 1505 | Raith EBPG5150 |
| Cited variants | — | |
| Specifications | ||
| Configuration | 5" reticle[2] | — |
| Resolution | 650 nm[3] | — |
| Numerical Aperture | 0.54[3] | — |
| Reduction | 5x[3] | — |
| Exposure Field | 15 x 15 mm[3] | — |
| Alignment Accuracy | 130 nm[3] | — |
| Wafer Size | 4 inch[2] | — |
| Light Source | g-line[4] | — |
| Introduction Year | 1988[3] | — |
| NA (Numerical Aperture) | 0.54[3] | — |
| Make | Nikon[2] | — |
| Model | 1505 G 6 E[2] | — |
| Category | Stepper[2] | — |
| Wafer Sizes | 4 inch[2] | — |
| Exposure type | g-line[3] | — |
| NA | 0.54[3] | — |
| Exposure field | 9.3 x 18.8 mm[3] | — |
| product family | — | Electron Beam Lithography[5] |
| system line | — | EBPG[1] |
| description | — | Highest throughput, automation, and precision[1] |
| column technology | — | Robust 100 kV column technology[1] |
| lithography resolution | — | below 5 nm[1] |
| exposure capability | — | Automated wafer and multi-sample exposures[1] |
| beam current | — | up to 350 nA[1] |
| overlay accuracy | — | ≤ 5 nm[1] |
| stitching accuracy | — | ≤ 8 nm[1] |
| stage size | — | same 6-inch laser stage (155 mm travel range)[1] |
| laser interferometer resolution | — | 10 λ/1024 (0.6 nm) standard[1] |
| thermo-calibration system | — | standard[1] |
| positional drift | — | < 25 nm / h[1] |
| control software | — | Digital RAITH Beams[1] |
| Product line | — | EBPG[5] |
| Technology | — | Electron beam lithography[5] |
| Stage | — | 6-inch laser stage[1] |
| Stage travel range | — | 155 mm[1] |
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