Waferpedia

Comparison ledger

H6-8versusWS-650-8

Laurell H6-8, Laurell WS-650-8, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
H6-8Laurell
WS-650-8Laurell
OEMLaurellLaurell
CategorySpin coaterSpin coater
Wafer size200mm200mm
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyLaurell H6-8Laurell WS-650-8
Cited variants
Specifications
Maximum rotational speed12,000 RPM (based on a 100mm silicon wafer)[1]12,000 RPM[2]
Substrate capacityUp to 7" × 7" (178mm × 178mm) substrates[1]Up to 7 in x 7 in (178 mm x 178 mm) substrates[2]
Wafer capacityUp to 200mm wafers[1]Up to 200 mm wafers[2]
Series650-series HL coater system[1]650-series[2]
Power95 to 240VAC, 47/63HZ, ~300 Watts[1]95 to 240VAC, 47/63HZ, ~300 Watts[2]
N2 process/seal purge60–70 PSIG (4–5 bar) of Nitrogen/ CDA; gas consumption 3 cubic feet per hour (0.085 m3/hour)[1]—
Vacuum25–28 inches (~635–711mm) Hg; flow volume 4.5 SCFM (0.127 cubic meters/minute) at 0 inches Hg[1]—
Typical process useSolvent, Base or Acid-based processing[3]—
System typeSpin coater[3]—
Standard chuckVacuum chuck[3]—
Standard adapterFragment adapter[3]—
Control softwareLaurell Touch process control software; Spin 3000 PC software[3]—
Vacuum requirement25 to 28 inches Hg; 4.5 SCFM at 0 inches Hg[3]—
Nitrogen/CDA purge pressure60 to 70 PSIG[3]—
Product type—Spin coater[2]
Basis for max speed rating—Based on a 100 mm silicon wafer[2]
Process controller—650-series process controller with robust microprocessor and accompanying PC software[2]
Power requirement—95 to 240 VAC, 47/63 Hz, approximately 300 W[2]
Nitrogen/CDA process/seal purge—60 to 70 PSIG (4 to 5 bar)[2]
Vacuum suggestion—25 to 28 inches Hg; 4.5 SCFM at 0 inches Hg[2]
Applications—Coating, etching, developing, rinsing-drying, and cleaning[2]
Model—WS-650-8B[2]
Category—Spin coater[2]
Speed reference condition—Based on a 100mm silicon wafer[2]

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Sources (3)Every fact above is drawn from these public sources
  1. [1]web.archive.orgweb.archive.org
  2. [2]web.archive.orgweb.archive.org
  3. [3]web.archive.orgweb.archive.org