Comparison ledger
Lam Research 4520 Oxide, Oxford Instruments 100 ICP Fluorine, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 4520 OxideLam Research | 100 ICP FluorineOxford Instruments |
|---|---|---|
| OEM | Lam Research | Oxford Instruments |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Lam Research Rainbow 4520 | Oxford Instruments 100 ICP Fluorine |
| Specifications | ||
| Configuration | Refurbished[1] | — |
| Mounting | Bulkhead[1] | — |
| Software | Envision 1.52[1] | — |
| Indexers | HINE[1] | — |
| AC Box | -002[1] | — |
| Gas Box | Orbital Welded[1] | — |
| Clamping | ESC[1] | — |
| Backside Helium | Closed Loop[1] | — |
| Generator | PDW 2200[1] | — |
| Endpoint | Monochrometer[1] | — |
| MFCs | Unit 1660[1] | — |
| Gas 1 | Ar 1000[1] | — |
| Gas 2 | N2 200[1] | — |
| Gas 3 | O2 200[1] | — |
| Gas 4 | CH4 200[1] | — |
| Gas 5 | CHF3 50[1] | — |
| Gas 6 | SF6 50[1] | — |
| Wafer Size | 200 mm (8 inch) standard, optional 150 mm (6 inch) and 125 mm (5 inch)[1] | — |
| RF Match | LOFAT[1] | — |
| Gas Configuration (example) | Gas 1: Ar 1000 sccm, Gas 2: N2 200 sccm, Gas 3: O2 200 sccm, Gas 4: CH4 200 sccm, Gas 5: CHF3 50 sccm, Gas 6: SF6 50 sccm, Gas 7: O2 1000 sccm[1] | — |
| Power Requirements | 208 V, 50 A, 50/60 Hz[2] | — |
| Dimensions (Width x Depth x Height) | 47.244 in x 98.425 in x 66.929 in (120.0 cm x 250.0 cm x 170.0 cm)[2] | — |
| Weight | 1,764 lb (800 kg)[2] | — |
| Uptime | ≥ 85%[3] | — |
| MTTC (Mean Time to Clean) | < 6 hours[3] | — |
| MTBF (Mean Time Between Failures) | ≥ 125 hours[3] | — |
| MTTR (Mean Time to Repair) | ≤ 4 hours[3] | — |
| Thermal Oxide Etch Rate | ≥ 4500 A/min[3] | — |
| BPSG Etch Rate | > 7500 A/min[3] | — |
| TEOS Etch Rate | > 5000 A/min[3] | — |
| Uniformity | +/- 10% 3σ[3] | — |
| Selectivity (BPSG/TEOS to poly) | > 15:1[3] | — |
| Particles | < 0.08/cm2 at >0.3μm[3] | — |
| Year of Manufacture (example) | 1996[2] | — |
| Gas 7 | O2 1000[1] | — |
| Software Revision | Envision 1.52[1] | — |
| Backside Helium Cooling | Closed loop[1] | — |
| RF Generator | PDW 2200 (2200 watt)[1] | — |
| Endpoint Detection | Monochrometer (enhanced Monochromator for automatic endpoint on exposed oxide)[1] | — |
| Process Gas Types (available) | Ar, CF4, CHF3, O2, CO, SF6, N2, Cl2, HBr, CH3F, He, CH2F2[2] | — |
| Exterior Dimensions (W x D x H) | 120.0 cm x 250.0 cm x 170.0 cm[2] | — |
| Uniformity (3σ) | ± 10%[3] | — |
| Uptime (typical) | ≥ 85%[3] | — |
| Etch Gases | — | SF6, CF4, O2, Ar, N2, CHF3, C4F8[5] |
| Cryo DRIE etch rate | — | up to 5 µm/min[5] |
| Wafer size | — | 4 inch, 6 inch, 8 inch (with clamp change)[5] |
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