Comparison ledger
Kurt Lesker 150LX, Kurt Lesker ALD-150LX, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 150LXKurt Lesker | ALD-150LXKurt Lesker |
|---|---|---|
| OEM | Kurt Lesker | Kurt Lesker |
| Category | Deposition | Deposition |
| Wafer size | 150mm | 150mm |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Kurt Lesker 150LX | Kurt Lesker ALD-150LX |
| Specifications | ||
| OEM | Kurt Lesker[1] | Kurt Lesker[5] |
| Model | ALD-150LX[1] | ALD-150LX[5] |
| Type | Plasma-enhanced atomic layer deposition (PE-ALD) system[1] | — |
| Location | Cleanroom[1] | — |
| Operating mode | Load-locked system[1] | — |
| In situ metrology | Film Sense FS-1 Multi-Wavelength ellipsometer[1] | — |
| Wafer size | Up to full 150 mm (6") wafers[1] | — |
| Process | Plasma-enhanced atomic layer deposition (PE-ALD)[1] | — |
| Substrate size | Up to 150mm[2] | — |
| Substrate heating | Up to 600°C[2] | — |
| Load lock | Load-locked system[1] | — |
| ALD process modes | Plasma Enhanced, Thermal only, Dynamic and Static Exposure for HAR, Variable Residence Mode (VRM)[2] | — |
| Ellipsometry | Standard on chamber[2] | — |
| Precursor inlets to chamber | Four (4), standard on chamber, independently heated[2] | — |
| Precursor sources | Up to twelve (12)[3] | — |
| Precursor types | Up to fourteen (14)[2] | — |
| Plasma source | 1 kW RF remote ICP[4] | — |
| Process type | Plasma-enhanced atomic layer deposition (PE-ALD)[1] | — |
| Substrate temperature | Up to 600°C[2] | — |
| Process modes | Plasma enhanced, thermal only, dynamic and static exposure for HAR, variable residence mode (VRM)[2] | — |
| Ellipsometry ports | Standard on chamber[2] | — |
| Precursor inlets | Four standard on chamber, independently heated[2] | — |
| Precursor capacity | Up to fourteen vapor draw flow through, bubbler, ozone pulsed gas plasma process gases[2] | — |
| Substrate handling | Load locked single wafer transfer[4] | — |
| Process gases | Argon, oxygen, nitrogen, hydrogen, ammonia, ozone[4] | — |
| Load-locked | — | Yes[1] |
| In situ ellipsometer | — | Film Sense FS-1 Multi-Wavelength[1] |
| Available film growth by request | — | Al2O3, HfO2, ZrO2, HfZrO2, TiN, Ga2O3[1] |
| Maximum film thickness stated | — | up to 20 nm[1] |
| Substrate specification | — | No exposed organics such as polymers[1] |
| Small samples | — | Able to be clipped to wafer carrier[1] |
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