Comparison ledger
Blanchard 20 36 Surface, Disco DAG810, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 20 36 SurfaceBlanchard | DAG810Disco |
|---|---|---|
| OEM | Blanchard | Disco |
| Category | Dicing & Grinding | Dicing & Grinding |
| Wafer size | — | 4" |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Blanchard 20 36 Surface | Disco DAG810 |
| Specifications | ||
| Configuration | With new Elecro-Matic Neutrol II Magnetic Chuck Control[1] | — |
| Magnetic Chuck Control | Electro-Matic Neutrol II[1] | — |
| Equipment type | — | compact, automatic grinder[2] |
| Materials | — | silicon, III/V materials (GaN, GaAs, InP), and various glass types (pure amorphous SiO2, float glass, pyrex)[2] |
| Wafer sizes supported by universal vacuum chuck table | — | 4", 5", 6", and 8"[2] |
| Mechanical frame use | — | for UV-tape mounted wafers or chips[2] |
| Spindle | — | high-rigidity, low-vibration spindle[2] |
| Grinding wheels | — | dedicated wheels for coarse and fine silicon grinding, coarse and fine glass grinding, and GaN fine grinding[2] |
| Probe-height | — | real-time probe-height from 4" wafer size[2] |
| User interface | — | LCD touch screen[2] |
| Grinding speed | — | as high as 30 microns/min[2] |
| Thickness variation | — | total thickness variation close to one micron[2] |
| Surface roughness | — | less than 100 nm[2] |
| Type | — | Automatic surface grinder[2] |
| Wafer sizes supported | — | 4", 5", 6", 8"[2] |
| Maximum grinding speed | — | 30 microns/min[2] |
| Total thickness variation (TTV) | — | ~1 micron[2] |
| Chuck table | — | One universal vacuum chuck table for 4", 5", 6", 8" wafer sizes[2] |
| Clamping | — | One mechanical frame clamping for UV-tape mounted wafers or chips[2] |
| Cooling method | — | Water cooling[2] |
| Materials processed | — | Silicon, III/V materials (GaN, GaAs, InP), various glass types (pure amorphous SiO2, float glass, pyrex)[2] |
| Workpiece types | — | Single wafers, stacked wafers, chips[2] |
| Wafer size support | — | 4", 5", 6", 8"[2] |
| Spindle type | — | High-rigidity, low-vibration spindle[2] |
| Supported wafer sizes | — | 4", 5", 6", 8"[2] |
| Wheel types | — | dedicated grinding wheels: coarse and fine silicon, coarse and fine glass, GaN fine[2] |
| Thickness reduction phases | — | 2 or 3 different phases with decreasing feed speed[2] |
| Cooling | — | water cooling to clear particles and mud[2] |
| Total thickness variation | — | close to one micron[2] |
| Chucking | — | one universal vacuum chuck table; one mechanical frame clamping for UV-tape mounted wafers or chips[2] |
| Operation interface | — | LCD touch screen[2] |
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