Comparison ledger
Axcelis NV GSD HE, Varian 160 XP, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | NV GSD HEAxcelis | 160 XPVarian |
|---|---|---|
| OEM | Axcelis | Varian |
| Category | Ion Implantation | Ion Implantation |
| Wafer size | 8" | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Axcelis NV GSD HE | Varian 160 XP |
| Cited variants | — |
|
| Specifications | ||
| Wafer size | Wafer can be converted back to 8"[2] | — |
| Configuration | Refurbished[2] | — |
| High level of safety | No stored H2, but on demand instant generation[2] | — |
| Serial number | 090084[4] | — |
| Manufacturing year | 2000[4] | — |
| Refurbishment | Refurbished[2] | — |
| Replacement | Both front and rear Cyro pumps by the OEM[2] | — |
| Upgrade | A low pressure H2 upgrade was performed[2] | — |
| System configuration | End station, disk module, final energy magnet, linac module, gas box, source[3] | — |
| Power supply | High voltage power supply[2] | — |
| Terminal power supplies | Filament, bias, arc, magnet, source magnet[2] | — |
| Vacuum pumps | Both front and rear Cryo pumps by the OEM[2] | — |
| Gas delivery | All gas box elements[2] | — |
| Ion source | Two new SAC IHC ion sources[2] | — |
| Chamber configuration | 1 Chamber, 1 Load Port[4] | — |
| Configuration (160 XP Ion variant) | — | 150mm High Current IMP[1] |
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