Comparison ledger
Applied Materials P 5000 Cluster, Tegal 6510, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | P 5000 ClusterApplied Materials | 6510Tegal |
|---|---|---|
| OEM | Applied Materials | Tegal |
| Category | Etch | Etch |
| Wafer size | 100mm | 100mm |
| Process node | — | down to 90nm |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials P 5000 Cluster | Tegal 6510 |
| Specifications | ||
| Chamber A | Metal etch, not usable (needs new chamber)[1] | — |
| Chamber B | Dielectric etch, fully functional[1] | — |
| Chamber C | Polysilicon etch, not functioning, gas flow issues, new helium seals required[1] | — |
| Chamber D | Not used, status unknown[1] | — |
| Configuration | With:[1] | one or two HRē etch modules on a high-vacuum cluster platform[3] |
| Wafer size | 4-inch/100mm wafer kit[1] | 100mm – 200mm[3] |
| Chamber Type | Cluster tool with four chambers[2] | — |
| Etch Type (Chambers A, B, C) | Magnetically-Enhanced Reactive Ion Etch (MERIE)[2] | — |
| Endpoint Detection | Optical endpoint detection[2] | — |
| Chamber A Function | Metal etch[1] | — |
| Chamber B Function | Dielectric etch[1] | — |
| Chamber C Function | Polysilicon etch[1] | — |
| Tool type | — | high-density CCP plasma etch tool[3] |
| RF power | — | dual-frequency RF power application[3] |
| Plasma confinement | — | magnetic plasma confinement[3] |
| Optimization node | — | optimized for device design rules down to 90nm[3] |
| Process type | — | High-density CCP plasma etch[3] |
| RF configuration | — | Dual-frequency RF power application[3] |
| Magnetic confinement | — | Yes[3] |
| Modules | — | One or two HRe etch modules on a high-vacuum cluster platform[3] |
| Design rule | — | 90nm[3] |
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