Waferpedia

Comparison ledger

0020 18698 Partversus100

Applied Materials 0020 18698 Part, Oxford Instruments 100, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
0020 18698 PartApplied Materials
100Oxford Instruments
OEMApplied MaterialsOxford Instruments
CategoryDepositionDeposition
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyApplied Materials 0020 18698 PartOxford Instruments 100
Specifications
ConfigurationDial Cover, Side Local Match, Hdpcvd, Ul[1]—
Process type—Plasma-Enhanced Chemical Vapor Deposition (PECVD)[2]
Electrode configuration—Top electrode RF driven (MHz and/or kHz); no RF bias on lower (substrate) electrode[3]
Substrate placement—Substrate sits directly on heated electrode[3]
Gas injection—Via showerhead gas inlet in top electrode[3]
Film stress control—By high/low frequency mixing techniques[3]
Temperature range—400 °C to 1200 °C (resistive heated electrodes)[3]
Wafer size compatibility—Up to 200 mm[3]
Chamber cleaning—In-situ plasma cleaning with end-point control[3]
Deposition uniformity—Excellent uniformity and high rate films[3]

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Sources (3)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]Equipment inventory listing
  3. [3]plasma.oxinst.complasma.oxinst.com