Comparison ledger
Applied Materials 0010 47763, Applied Materials Centura 5200 MXP+, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010 47763Applied Materials | Centura 5200 MXP+Applied Materials |
|---|---|---|
| OEM | Applied Materials | Applied Materials |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010 47763 | Applied Materials Centura 5200 |
| Cited variants | — |
|
| Specifications | ||
| Configuration | 2nd Source New[2] | Components:[5] |
| Type | Monopolar Dual Heated[3] | — |
| Description | ASSY, ESC, BONDED, MONOPOLAR DUAL HEATED[4] | — |
| Possible Materials | Al2O3 (aluminum oxide) or AlN (aluminum nitride)[3] | — |
| Model | 0010-47763[2] | Centura 5200 MXP+[5] |
| OEM | Applied Materials[2] | — |
| Material (possible) | Al2O3 (aluminum oxide) or AlN (aluminum nitride)[3] | — |
| Application | Fixing wafers in etching process (PVD, CVD, ETCH)[3] | — |
| Quantity available (source) | 1[3] | — |
| ESC Type | — | Polymide[5] |
| Endpoint | — | Monochromator[6] |
| Gases Used | — | NF3, CH3F, CL2, HBr, CHF3, Ar, CF4, O2, N2, C4F8, CO[5] |
| Mass Flow Controllers (MFCs) | — | 32 Digital MFCs (14-Unit or 18-Horiba)[5] |
| Software Version | — | 4.9_15[7] |
| Dry Pumps | — | IQDP80 (x4) / IQDP80/WSU151 (x2)[6] |
| Chillers | — | Neslab 150 units (x5)[5] |
| Mainframe | — | SHO[8] |
| Gas Panel Type | — | Standard[8] |
| Voltage | — | 208 VAC, 3 Phase, 240 A, 50/60 Hz[8] |
| System Controller | — | Standard[8] |
| Fab Installation | — | TTW[8] |
| System Umbilicals | — | 50 ft - standard[8] |
| Heat Exchanger Type 1 | — | AMAT 0[8] |
| Heat Exchanger Type 2 | — | Neslab[8] |
| Loadlock pump | — | Ebara[8] |
| Pump Size | — | A 10[8] |
| I/O Slit Valve Type | — | Viton[8] |
| HF RF Gen Type | — | ENI OEM 12B-3[8] |
| Etch RF Match Type | — | Phase 4[9] |
| FAB Monitor | — | TTW[8] |
| Liquid Delivery | — | None[8] |
| LF RF Gen Type | — | None[8] |
| Chamber A | — | MXP[8] |
| Slit Valve Type | — | Anodized[8] |
| Chamber A Process | — | Oxide[8] |
| Process Kit Type | — | Oxide Etch ESC[8] |
| Manufacturer | — | Applied Materials[5] |
| Category | — | Etch[9] |
| Wafer size | — | 200 mm[6] |
| Configured for | — | 200 mm[6] |
| HF RF generator type | — | ENI OEM 12B-3[9] |
| LF RF generator type | — | None[9] |
| Vacuum pumps | — | IQDP80 (x4) / IQDP80/WSU151 (x2)[5] |
| Robot | — | HP Robot[7] |
| Gas delivery | — | 32 Digital MFCs (14-Unit or 18-Horiba)[9] |
| Control software | — | 4.9_15[6] |
| Configured wafer size | — | 200 mm[7] |
| Gas set | — | NF3, CH3F, CL2, HBr, CHF3, Ar, CF4, O2, N2, C4F8, CO[5] |
| Mass flow controllers | — | 32 Digital MFCs 14-Unit or 18-Horiba[6] |
| Dry pumps | — | 4-IQDP80, 2-IQDP80/WSU151[6] |
| Components | — | Orienter (x1), MxP Poly (x1), MxP+ Poly (x2), eMxP+ (x1)[5] |
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