Comparison ledger
Applied Materials 0010-13622 RF Match for, Tystar 3600, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010-13622 RF Match forApplied Materials | 3600Tystar |
|---|---|---|
| OEM | Applied Materials | Tystar |
| Category | Deposition | Deposition |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010-13622 RF Match for | Tystar 3600 |
| Specifications | ||
| Configuration | High Efficiency HE RF Match-Bias[1] | — |
| Model | 0010-13622[1] | 3600[2] |
| Product Type | RF Match for PVD (Physical Vapor Deposition)[1] | — |
| Feature | High Efficiency HE RF Match-Bias[1] | — |
| OEM | — | Tystar[2] |
| Equipment type | — | LPCVD[2] |
| Process type | — | LPCVD (Low Pressure Chemical Vapor Deposition)[2] |
| Number of tubes | — | Three tubes (Tube 1, Tube 3, and one unnamed)[2] |
| LSN deposition temperature (default) | — | 835°C[2] |
| LSN deposition pressure (default) | — | 250 mTorr[2] |
| LSN ammonia flow (default) | — | 100 sccm (high flow), 20 sccm (low flow)[2] |
| LSN dichlorosilane flow (default) | — | 100 sccm[2] |
| LTO deposition temperature (default) | — | 450°C[2] |
| LTO deposition pressure (default) | — | 400 mTorr[2] |
| LTO oxygen flow (default) | — | 30 sccm[2] |
| LTO silane flow (default) | — | 20 sccm[2] |
| Wafer sizes supported | — | 2 inch, 3 inch, 4 inch, and 6 inch wafers[2] |
| Boat capacity (Tube 1 LSN) | — | Up to 25 wafers[2] |
| Boat capacity (Tube 3 LTO) | — | Up to 26 wafers[2] |
| Process gases | — | Silane (SiH4), Dichlorosilane (DCS), Ammonia (NH3)[2] |
| Control systems | — | FCS-10 (Furnace Control System) touchscreen computer, DCS-30 (Data Capture System) computer[2] |
Plan your fab
Building a Deposition process? Get a complete equipment list.
Open the fab equipment planner →