Comparison ledger
Applied Materials 0010-13622 RF Match for, Temescal 4-pocket, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010-13622 RF Match forApplied Materials | 4-pocketTemescal |
|---|---|---|
| OEM | Applied Materials | Temescal |
| Category | Deposition | Deposition |
| Wafer size | — | 5" |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010-13622 RF Match for | Temescal 4-pocket |
| Specifications | ||
| Configuration | High Efficiency HE RF Match-Bias[1] | — |
| Model | 0010-13622[1] | — |
| Product Type | RF Match for PVD (Physical Vapor Deposition)[1] | — |
| Feature | High Efficiency HE RF Match-Bias[1] | — |
| Manufacturer | — | Temescal[2] |
| Tool type | — | Vacuum Deposition[2] |
| Description | — | Electron-Beam Evaporation System[2] |
| E-beam source | — | Temescal 4-pocket Series 260 E-Beam turret source[2] |
| Power supply | — | Temescal CV-6SXL 10 kV power supply[2] |
| Controller | — | Temescal TemEbeam Controller (EBC)[2] |
| Deposition controller | — | Inficon IC/5 Thin Film Deposition Controller[2] |
| Vacuum system | — | Cryo-pumped system with low E-7 ultimate base pressure[2] |
| Vacuum sequencing | — | Automatic vacuum sequencing via CHA Auto-Tech II[2] |
| Thickness monitoring | — | Crystal thickness monitoring[2] |
| Sample size | — | up to 5" diameter non-heated, 4" diameter heated[2] |
| Heated sample holder | — | Programmable, sample temps up to 370°C[2] |
| Gas | — | Oxygen gas MFC for maintaining oxide stoichiometry[2] |
| E-beam sources | — | 2-Temescal 4-pocket series 260 e-beam sources[3] |
| Load-lock | — | Load-lock for quick turn-around[3] |
| Sweep control | — | Temescal Super Sweep e-beam sweep control[3] |
| Tool Type | — | Vacuum Deposition (Electron-Beam Evaporation System)[2] |
| Power Supply (Dielectric System) | — | Temescal CV-6SXL 10 kV power supply[2] |
| Power Supply (Metal System) | — | Temescal CV-6S 10 kV power supply[3] |
| E-Beam Source (Dielectric System) | — | Temescal 4-pocket Series 260 E-Beam turret source[2] |
| E-Beam Sources (Metal System) | — | 2-Temescal 4-pocket series 260 e-beam sources[3] |
| Controller (Dielectric System) | — | Temescal TemEbeam Controller (EBC); controls HV, beam position (8 sweep patterns per pocket), pocket position[2] |
| Deposition Controller | — | Inficon IC/5 Thin Film Deposition Controller (Dielectric); Inficon IC/5 programmable crystal thickness monitoring system (Metal)[2] |
| Vacuum System (Dielectric) | — | Cryo-pumped system with low E-7 ultimate base pressure[2] |
| Vacuum System (Metal) | — | Cryo-pumped system with ~ 5e-7 ultimate base pressure[3] |
| Vacuum Sequencing (Dielectric) | — | Automatic vacuum sequencing via CHA Auto-Tech II[2] |
| Vacuum Sequencing (Metal) | — | Automatic vacuum sequencing[3] |
| Sample Size (Dielectric) | — | up to 5" diameter non-heated, 4" diameter heated[2] |
| Sample Size (Metal) | — | 1 wafer up to 4" diameter[3] |
| Heated Sample Holder (Dielectric) | — | Programmable, sample temps up to 370°C[2] |
| Load-Lock (Metal System) | — | Load-lock for quick turn-around[3] |
| Sweep Control (Metal System) | — | Temescal Super Sweep e-beam sweep control[3] |
| Thickness Monitoring (Dielectric) | — | Crystal thickness monitoring[2] |
| Oxygen gas | — | Oxygen gas MFC for maintaining oxide stoichiometry[2] |
| Wafer size | — | 5"[4] |
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