Comparison ledger
ABM -407B-1-S-CES293 Robot, Samsung DDR4 DRAM Chips, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | DDR4 DRAM ChipsSamsung | |
|---|---|---|
| OEM | ABM | Samsung |
| Category | — | — |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | 2011– |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | ABM -407B-1-S-CES293 Robot | Samsung DDR4 DRAM Chips |
| Specifications | ||
| Model | ABM-407B-1-S-CES293[1] | — |
| Description | ROBOT[1] | — |
| Refurbished RTP RTA | AG Associates 4100, 4108, 8108, 8800, 8800i,210, 310, 410, 610, 610I, MPT RTP-600S, 800S, RTP-3000[1] | — |
| KLA-Tencor Spare Parts and Service | RS-35C,RS-55,RS-75,RS-100,UV-1050,UV-1080,UV-1250,UV-1280,ASET F5 / F5X,AIT Systems,HRP-220 Stylus Profiler[1] | — |
| Refurbished Isotropic Plasma Etcher | Matrix, Tegal, Lam Research, Branson/IPC, PlasmaTherm[1] | — |
| Refurbished PECVD, ALD Equipment | Cambridge, Oxford PlasmaLab , Plasma-Therm, STS/SPTS, AMAT[1] | — |
| Refurbished Mask Aligner | Canon Neutronix PLA501/545, Suss MA200CC, MA8BA8 GEN3, MA8BA8 GEN2, MA8BA8, MA200E[1] | — |
| Refurbished Bonding | SUSS SB6E, SUSS SB8E, EVG 620 BA, EVG EV501, West Bond 7200AR 7400A[1] | — |
| Refurbished Wafer Prober | Electroglas EG 4090u+, EG 4090, EG 2001X, EG 1034X, Cascade PS-21[1] | — |
| Type | — | Synchronous dynamic random-access memory (SDRAM)[2] |
| Generation | — | 4th generation[2] |
| Release date | — | 2014[2] |
| Operating voltage | — | 1.2 V[2] |
| Maximum data transfer rate | — | 3,200 Mbps[3] |
| Bank groups | — | 4 bank groups (total 16 banks)[3] |
| System memory bandwidth | — | 1 TB/s[3] |
| Node process | — | 1x nm[3] |
| Prefetch buffer | — | 8n-prefetch architecture[2] |
| Clock rate | — | 800–1600 MHz[2] |
| Transfer rate range | — | 1600 MT/s to 3200 MT/s[2] |
| Bandwidth range | — | 12.8 GB/s to 25.6 GB/s[2] |
| Standard transfer rates | — | 1600, 1866, 2133, 2400, 2666, 2933, 3200 MT/s[2] |
| Internal banks | — | 16 (4 bank select bits)[2] |
| Ranks per DIMM | — | Up to 8[2] |
| ECC support | — | Optional[2] |