Comparison ledger
SUSS MicroTec 150 e Mask, SUSS MicroTec MA1006, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 150 e MaskSUSS MicroTec | MA1006SUSS MicroTec |
|---|---|---|
| OEM | SUSS MicroTec | SUSS MicroTec |
| Category | Lithography | Lithography |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | SUSS MicroTec 150 e Mask | SUSS MicroTec MA1006 |
| Cited variants | — | |
| Specifications | ||
| OEM | — | SUSS MicroTec[3] |
| Model | — | MA1006[3] |
| Tool category on source page | — | Step Height PROFILOMETER[3] |
| Resolution | — | 1 micron on 6-inch wafers[4] |
| Measured linewidth | — | 2 µm at full photoresist height (Shipley 1813 process)[5] |
| Wafer size | — | up to 150mm diameter[2] |
| Mask size | — | maximum 7" x 7"[2] |
| Exposure modes | — | Proximity, soft, hard, vacuum contact[2] |
| Exposure optics | — | UV400: 350-450nm; UV300: 280-350nm; Hg-lamp 350W or 1000W[2] |
| Exposure uniformity | — | ±5% typical for 150mm wafer[2] |
| Alignment step | — | 1μm steps[2] |
| Soft contact pressure | — | 2-8 N[2] |
| Hard contact pressure | — | Nitrogen pressure 0-2 bar[2] |
| Vacuum contact level | — | < -0.8 bar[2] |
| Dimensions (W×H×D) | — | ca. 920mm × 1600mm × 870mm[2] |
| Weight | — | ca. 450 kg[2] |
| Power requirement | — | 350W lamp: 1200 VA; 1000W lamp: 2000 VA[2] |
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