Waferpedia

Comparison ledger

Versaline ICP Deep Siliconversus1512e

Plasma-Therm Versaline ICP Deep Silicon, Tegal 1512e, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
1512eTegal
OEMPlasma-ThermTegal
CategoryEtchEtch
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyPlasma-Therm Versaline ICPTegal 1512e
Specifications
Phase208/220 VAC, 3 Phase[1]—
Configuration30 A, 4-Wire[1]—
Process typeInductively coupled plasma etcher[1]—
ApplicationDeep silicon etch[2]—
Electrical requirements208/220 VAC, 3 phase, 30 A, 4-wire, 50/60 Hz[1]—
Compatible materialsSi[2]—
Incompatible materialsIII-V / Hi K / Metal[2]—
Tool type—Industrial RIE plasma etcher system[3]
Stated configuration—With modules assembly for CI-4222[3]

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Sources (3)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]research.utexas.eduresearch.utexas.edu
  3. [3]semistarcorp.comsemistarcorp.com