Comparison ledger
Oxford Instruments 100 ICP Fluorine, Tegal 6500 HRe-, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 100 ICP FluorineOxford Instruments | 6500 HRe-Tegal |
|---|---|---|
| OEM | Oxford Instruments | Tegal |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Oxford Instruments 100 ICP Fluorine | Tegal 6500 HRe- |
| Cited variants | — | |
| Specifications | ||
| Etch Gases | SF6, CF4, O2, Ar, N2, CHF3, C4F8[2] | — |
| Cryo DRIE etch rate | up to 5 µm/min[2] | — |
| Wafer size | 4 inch, 6 inch, 8 inch (with clamp change)[2] | — |
| System type | — | Dual Frequency Etch System Series[1] |
| Tool architecture | — | Hosts a cluster of plasma etching tools[1] |
| Etch chamber configuration | — | One or two etching chambers[1] |
| Wafer processing modes | — | Serial or parallel wafer processing[1] |
| Loading ports | — | Single or dual loading ports[1] |
| Plasma generation | — | Dual frequencies for high-density, capacitively coupled plasma (CCP) generation[1] |
| Plasma confinement | — | Magnetic plasma confinement[1] |
| Etch precision | — | Down to the sub-micron level[1] |
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