Waferpedia

Comparison ledger

100 ICP FluorineversusPlasmalab 100 Plus RIE

Oxford Instruments 100 ICP Fluorine, Oxford Instruments Plasmalab 100 Plus RIE, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
100 ICP FluorineOxford Instruments
Plasmalab 100 Plus RIEOxford Instruments
OEMOxford InstrumentsOxford Instruments
CategoryEtchEtch
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyOxford Instruments 100 ICP FluorineOxford Instruments Plasmalab 100
Specifications
Etch GasesSF6, CF4, O2, Ar, N2, CHF3, C4F8[1]—
Cryo DRIE etch rateup to 5 µm/min[1]—
Wafer size4 inch, 6 inch, 8 inch (with clamp change)[1]—
Configuration—Load-locked System[2]
Tool type—Reactive ion etcher[2]
Category—Etch[3]
Wafer sizes—2, 3, 4, 5, 6, 8, 12 inch[2]
System configuration—Load-locked system[2]
Gas module—Currently set up for Ar, O2, Cl2, and SiCl4; capable of 6 gases[2]
Included items—Computer, keyboard, new flat panel monitor, system chiller, turbo pump, load lock pump, operations manual and documentation[2]
Condition—Fully refurbished and meeting original specifications[2]

Plan your fab

Building a Etch process? Get a complete equipment list.

Open the fab equipment planner →
Sources (3)Every fact above is drawn from these public sources
  1. [1]nanofab.utah.edunanofab.utah.edu
  2. [2]inventory listing
  3. [3]waferpedia.comwaferpedia.com