Comparison ledger
memsstar Orbis Alpha, Oxford Instruments Plasmalab 80 Plus, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | Orbis Alphamemsstar | Plasmalab 80 PlusOxford Instruments |
|---|---|---|
| OEM | memsstar | Oxford Instruments |
| Category | Etch | Etch |
| Wafer size | 200mm | 200mm |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | memsstar Orbis Alpha | Oxford Instruments Plasmalab 80 |
| Specifications | ||
| System type | oxide etch system[1] | — |
| Process chemistry | hydrogen fluoride etchants[1] | — |
| Footprint | small footprint[1] | — |
| Dimensions | 600 x 540 x 900 mm[1] | — |
| Control | PC controlled[1] | — |
| User interface | resistive touch screen[1] | — |
| Selectivity to silicon nitride and silicon dioxide | < 5% 1σ[1] | — |
| Uniformity | < 5% 1σ[1] | — |
| Repeatability | < 5% 1σ[1] | — |
| Endpoint capability | unique endpoint capability[1] | — |
| Substrate size range | sample sizes to 200 mm[1] | — |
| Selectivity (silicon nitride and silicon dioxide) | excellent (<5% 1σ)[1] | — |
| Uniformity and repeatability | <5% 1σ[1] | — |
| Control interface | PC controlled with resistive touch screen[1] | — |
| Endpoint detection | unique endpoint capability[1] | — |
| Process window | large process window to optimize process for any structure[1] | — |
| Tool ID | — | DE-04[2] |
| Type | — | Reactive Ion Etching (RIE)[2] |
| Design | — | compact open-loading tool[2] |
| RF generator | — | 600W[2] |
| Wafer capacity | — | up to 200mm wafers[2] |
| Process gases | — | CF4, Ar, O2, SF6, CHF3[2] |
| Suitability | — | R&D or small-scale production[2] |
| RF power | — | 600W[2] |
| Maximum wafer size | — | 200mm[2] |
| Tool type | — | Reactive Ion Etching (RIE)[2] |
| Wafer size | — | Up to 200mm[2] |
| Loading type | — | Open load[2] |
| -Process | — | PECVD |
| -Voltage | — | 208 VAC, 3 Phase |
| -Equipment component | — | Main body |
| Description | — | Open load reactive ion etch system[3] |
| Wafer size designed for | — | 100 mm[3] |
| Wafer size maximum | — | 200 mm[3] |
| Platen size | — | 238 mm[3] |
| Power range | — | < 270 W[3] |
| Etch targets | — | Compound semiconductors and metals[3] |
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