Waferpedia

Comparison ledger

EDC-HL-23versusH6-15

Laurell EDC-HL-23, Laurell H6-15, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
EDC-HL-23Laurell
H6-15Laurell
OEMLaurellLaurell
CategorySpin coaterSpin coater
Wafer size150mm300mm
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation650-series—
FamilyLaurell EDC-HL-23Laurell H6-15
Cited variants
  • EDC-HL-23 B650-series[1]
—
Specifications
Process controller650-series process controller[1]—
Wafer capacityUp to 150 mm wafers[1]—
Substrate capacityUp to 5 in x 5 in (127 mm x 127 mm) substrates[1]—
Maximum rotation capability12,000 RPM with vacuum hold-down[1]—
Recommended operating speed3,000 RPM with non-vacuum chucks[1]—
Power95 to 240 VAC, 47/63 Hz, ~300 Watts[1]95 to 240VAC, 47/63HZ, ~300 Watts[2]
Nitrogen/CDA seal purge pressure60–70 PSIG (4–5 bar)[1]—
Vacuum recommendation25–28 inches Hg with 4.5 SCFM at 0 inches Hg[1]—
Model—H6-15[2]
Series—650-series HL coater system[2]
Maximum wafer size—Up to ø 300mm wafers[2]
Maximum substrate size—9" × 9" (229mm × 229mm) substrates[2]
Maximum rotational speed—12,000 RPM[2]
Controller/software—Wireless tablet featuring Laurell Touch process control software; accompanying PC software Spin 3000 is also mentioned[2]
Required nitrogen/CDA purge—60–70 PSIG (4–5 bar)[2]
Vacuum—25–28 inches Hg suggested; 4.5 SCFM at 0 inches Hg[2]
Wafer size—up to ø 300mm wafers[2]
Substrate size—9" × 9" (229mm × 229mm) substrates[2]
Speed basis—based on a ø 100mm silicon wafer[2]
Control software—Laurell Touch process control software with accompanying Spin 3000 PC software[2]
Controller—wireless tablet[2]
Gas purge—60–70 PSIG Nitrogen/CDA[2]

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Sources (2)Every fact above is drawn from these public sources
  1. [1]web.archive.orgweb.archive.org
  2. [2]web.archive.orgweb.archive.org