Comparison ledger
Lam Research 2300 Versys Kiyo 45, Oxford Instruments 100 ICP Fluorine, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 2300 Versys Kiyo 45Lam Research | 100 ICP FluorineOxford Instruments |
|---|---|---|
| OEM | Lam Research | Oxford Instruments |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Lam Research 2300 Versys Kiyo 45 | Oxford Instruments 100 ICP Fluorine |
| Specifications | ||
| OEM | Lam Research[1] | — |
| Model | 2300 Versys Kiyo 45[1] | — |
| Category | Etch[2] | — |
| Wafer size | 300mm[3] | 4 inch, 6 inch, 8 inch (with clamp change)[4] |
| Tool type | high-density plasma etch system[2] | — |
| Application | advanced patterning applications[2] | — |
| Processes | conductor and silicon etch processes[2] | — |
| Etch characteristics | precise anisotropic etching, excellent critical dimension control, and high aspect ratio capability[2] | — |
| Etch Gases | — | SF6, CF4, O2, Ar, N2, CHF3, C4F8[4] |
| Cryo DRIE etch rate | — | up to 5 µm/min[4] |
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