Comparison ledger
KLA .204 PSL Wafer, KLA 8720, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 8720KLA | |
|---|---|---|
| OEM | KLA | KLA |
| Category | Metrology & Inspection | Metrology & Inspection |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | KLA .204 PSL Wafer | KLA 8720 |
| Specifications | ||
| Configuration | NIST Traceable[1] | With:[3] |
| Wafer Size | 8 inch[1] | — |
| Traceability | NIST[2] | — |
| Compatible Tools | Surfscan 6xy0, Sp1[1] | — |
| NIST Traceable | Yes[1] | — |
| Type | — | Optical Patterned Wafer Defect Inspection System[4] |
| Wafer Diameter | — | 200 mm[5] |
| Substrate | — | Compound semiconductor wafers[4] |
| Laser Wavelengths | — | 405 nm and 532 nm (continuous-wave diode lasers)[4] |
| Defect Detection Capability | — | Macro-defects ≥5 µm (cracks, slip lines, wafer warpage); micro-defects sub-µm (particles, quantum-well perturbations, localized strain fields)[4] |
| Operational Modes | — | High-throughput, standard resolution, high resolution[6] |
| Data Output | — | Defect map, Pareto chart, defect inspection summary, contour map, image review with DOI (Defect of Interest)[6] |
| Data Format | — | Vendor-neutral TIFF + XML metadata format[4] |
| Data Integrity | — | Audit-ready metadata tagging per ISO/IEC 17025; timestamped tool parameters, environmental sensor readings (temperature, humidity)[4] |
| Application | — | Automated defect inspection for LED materials and multiple compound semiconductor substrates[6] |
| Detection principle | — | Multi-angle elastic and inelastic scattering imaging[4] |
| Key capabilities | — | Simultaneous dual-angle scatterometry, surface topography mapping, reflectance profiling, phase contrast imaging, and photoluminescence (PL) detection[4] |
| Inspection modes | — | High-throughput, standard resolution, high resolution[6] |
| Light sources | — | Continuous-wave 405 nm and 532 nm diode lasers[4] |
| Minimum detectable defect size (micro) | — | Sub-µm particles[4] |
| Macro defect detection | — | ≥5 µm cracks, slip lines, wafer warpage[4] |
| Substrate compatibility | — | GaN, GaAs, InP, SiC, AlN[4] |
| Wafer thickness range | — | 100 µm to >1 mm[4] |
| Wafer handling | — | Front-end robotic loading with SMIF pod or FOUP compatibility; manual load option[4] |
| Cleanroom class | — | Class 100–1000[4] |
| Compliance | — | SEMI E30 (SECS/GEM), ISO 9001[4] |
| Software | — | KLA Inspector software suite with supervised machine learning defect classification[4] |
| Data format | — | Vendor-neutral TIFF + XML metadata[4] |
| Optional features | — | FDA 21 CFR Part 11 compliant electronic signature and audit trail packages[4] |
| Defect types detected | — | Micro-pits, cracks, hexagonal bumps, showerhead droplets, crescents, scratches, slip lines, epi pits, crystal defects, PL scratches, residue, wafer map contour defects[6] |
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