Waferpedia

Comparison ledger

1305 BSG 3versusR3

Hitachi 1305 BSG 3, YES R3, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
1305 BSG 3Hitachi
R3YES
OEMHitachiYES
CategoryWet Processing / CleanWet Processing / Clean
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyHitachi 1305 BSG 3YES R3
Specifications
System type—Plasma cleaner / plasma cleaning system[1]
Control—Sequential microprocessor[1]
Program storage—Up to 90 separate one- or two-gas programs in memory[1]
Power supply—500 Watt[1]
Plasma gas inputs—Two standard; optional third input[1]
Backfill input—Standard[1]
Electrode sets—Two 12-inch square electrode sets standard[1]
Sample tray capacity—Two 12 x 12 in. sample trays; total capacity 325 sq.in.[1]
Sample trays—Two 12 x 12 in.; total capacity 325 sq.in.[1]
Controller—Sequential microprocessor; up to 90 stored one- or two-gas programs[1]
Process gas and modes (UC Santa Barbara configuration)—Oxygen; downstream and direct plasma cleaning[2]
Position in series—Smallest of the series; pilot run quantities[1]
Equipment type—Plasma cleaning system[3]
Control system—Sequential microprocessor[1]
Stored programs—Up to 90 separate one- or two-gas programs[1]

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Sources (3)Every fact above is drawn from these public sources
  1. [1]web.archive.orgweb.archive.org
  2. [2]cnsi.ucsb.educnsi.ucsb.edu
  3. [3]web.archive.orgweb.archive.org