Waferpedia

Comparison ledger

1305 BSG 3versusR1

Hitachi 1305 BSG 3, YES R1, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
1305 BSG 3Hitachi
R1YES
OEMHitachiYES
CategoryWet Processing / CleanWet Processing / Clean
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle—Legacy
Lifecycle milestones——
Control system——
Generation——
FamilyHitachi 1305 BSG 3YES R1
Cited variants—
Specifications
Plasma clean benchmark—5 minute Argon plasma clean[1]
Referenced use—Industry standard for 15 years[1]
Input power / rating—120 V, 60 Hz, 1.4 A, 175 W[2]
Controller—Y.E.S. ‘Lark’ Logical Sequencer[2]
Plasma power source—Plasma-Therm PE-1000, ~1 kW, ~50 kHz, 115 VAC[2]
Matching network—Advanced Energy LM-5K manual transformer[2]
Vacuum pump—Fisher Scientific Maxima C Plus Model M2C, KF-16 inlet[2]
Process gases—Ar or O2[3]
Chamber temperature range—25–80 °C (typical, from plasma heat)[3]
Maximum substrate size—12 inch[3]
Sample size range—Small pieces up to 12 in x 12 in x 4 in[3]

Plan your fab

Building a Wet Processing / Clean process? Get a complete equipment list.

Open the fab equipment planner →
Sources (3)Every fact above is drawn from these public sources
  1. [1]web.archive.orgweb.archive.org
  2. [2]nfc.arizona.edunfc.arizona.edu
  3. [3]nnci.netnnci.net