Comparison ledger
Heidelberg Instruments DWL66, Raith EBPG5200, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | DWL66Heidelberg Instruments | EBPG5200Raith |
|---|---|---|
| OEM | Heidelberg Instruments | Raith |
| Category | Lithography | Lithography |
| Wafer size | 6" | 6" |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Heidelberg Instruments DWL66 | Raith EBPG5200 |
| Cited variants |
|
|
| Specifications | ||
| Resolution | 40 nm, 100 nm, 200 nm, 400 nm[3] | — |
| Minimum feature | 0.5 µm[3] | — |
| Laser sources | 244 nm, 363 nm, 413 nm, 442 nm[3] | — |
| Substrates | glass, silicon or any other flat materials[3] | — |
| Exposure | photoresist[3] | — |
| Image size | 140 mm x 140 mm[3] | — |
| Substrate size | up to 200 mm by 200 mm[1] | — |
| Technology | — | Direct write lithography / electron beam lithography[4] |
| Platform | — | Universal plinth platform shared with EBPG5150[4] |
| Stage | — | 6" full travel[4] |
| Column technology | — | EBPG Electron 100 kV[4] |
| Pattern generator | — | 125 MHz[4] |
| Beam current | — | Up to 350 nA[4] |
| Overlay accuracy | — | ≤ 5 nm[4] |
| Minimum feature size | — | Less than 8 nm[4] |
| Acceleration voltages | — | 20, 50 and 100 kV[4] |
| Large field size | — | Continuously variable up to 1 mm at all kVs[4] |
| Sample handling | — | Automatic 2 holder as standard; 10 holder optional[4] |
| Wafer size | — | 6"[5] |
| Acceleration voltage | — | 100 kV[2] |
| Maximum current | — | 350 nA[2] |
| Mainfield size | — | 1 mm[2] |
| Minimum linewidth | — | <8 nm[2] |
| Beam current range | — | 100 pA to 250 nA[6] |
| Beam step frequency | — | 500 Hz to 125 MHz[6] |
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