Comparison ledger
GCA 8500 Wafer, Nikon 1505 G 6 E, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 8500 WaferGCA | 1505 G 6 ENikon |
|---|---|---|
| OEM | GCA | Nikon |
| Category | Lithography | Lithography |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | 1988– |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | GCA 8500 Wafer | Nikon 1505 |
| Specifications | ||
| Configuration | 5 Axis[1] | 5" reticle[4] |
| Equipment type | Commercial wafer stepper[2] | — |
| OEM | GCA[1] | — |
| Reduction ratio | 5x[1] | — |
| Exposure source | i-line[2] | — |
| Resolution capability | Sub-micron features[3] | — |
| Axis configuration | 5-axis[1] | — |
| Wafer diameter | 150 mm[2] | — |
| Wafer geometry supported | 1-flat, 2-flat, notched, no-flat[2] | — |
| Wafer materials supported | Silicon, silicon on insulator[2] | — |
| Wafer thickness range | 500–700 µm[2] | — |
| Batch size | 1 wafer (150 mm)[2] | — |
| Demonstrated wafer use | 6-inch silicon-on-insulator wafer[3] | — |
| Resolution | — | 650 nm[5] |
| Numerical Aperture | — | 0.54[5] |
| Reduction | — | 5x[5] |
| Exposure Field | — | 15 x 15 mm[5] |
| Alignment Accuracy | — | 130 nm[5] |
| Wafer Size | — | 4 inch[4] |
| Light Source | — | g-line[6] |
| Introduction Year | — | 1988[5] |
| NA (Numerical Aperture) | — | 0.54[5] |
| Make | — | Nikon[4] |
| Model | — | 1505 G 6 E[4] |
| Category | — | Stepper[4] |
| Wafer Sizes | — | 4 inch[4] |
| Exposure type | — | g-line[5] |
| NA | — | 0.54[5] |
| Exposure field | — | 9.3 x 18.8 mm[5] |
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