Waferpedia

Comparison ledger

810versus100 ICP Fluorine

EV Group 810, Oxford Instruments 100 ICP Fluorine, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
810EV Group
100 ICP FluorineOxford Instruments
OEMEV GroupOxford Instruments
CategoryEtchEtch
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyEV Group 810Oxford Instruments 100 ICP Fluorine
Specifications
Listed functionPlasma Activation[1]—
Tool categoryPlasma Etching and Cleaning[1]—
Model designationEVG 810[1]—
Etch Gases—SF6, CF4, O2, Ar, N2, CHF3, C4F8[2]
Cryo DRIE etch rate—up to 5 µm/min[2]
Wafer size—4 inch, 6 inch, 8 inch (with clamp change)[2]

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Sources (2)Every fact above is drawn from these public sources
  1. [1]wiki.nanotech.ucsb.eduwiki.nanotech.ucsb.edu
  2. [2]nanofab.utah.edunanofab.utah.edu