Comparison ledger
EV Group 101, SUSS MicroTec MJB 4 Mask, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 101EV Group | MJB 4 MaskSUSS MicroTec |
|---|---|---|
| OEM | EV Group | SUSS MicroTec |
| Category | Lithography | Lithography |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | EV Group 101 | SUSS MicroTec MJB |
| Specifications | ||
| OEM | EV Group[1] | SUSS MicroTec[5] |
| Model | 101[1] | MJB 4[6] |
| Equipment name | EVG 101 Spray Coater[1] | — |
| NEMO ID | evgspraycoat[1] | — |
| Training required | EVG 101 Training[1] | — |
| Training duration | 1.50 hours[1] | — |
| Processing technique | Resist Spray Coat (manual)[1] | — |
| Cleanliness | "All"[1] | — |
| Location | SNF Paul G Allen L107 Cleanroom[1] | — |
| Wafer diameter (substrate size) | up to 300 mm[2] | — |
| Available modules | Spin coat / OmniSpray® / develop[2] | — |
| Wafer handling options | Bowed / warped / thin wafer handling, edge handling[2] | — |
| Dispense options | Various resist dispense pumps covering viscosities up to 52000 cP; constant pressure dispense systems; EBR / BSR / pre-wet / bowl wash / liquid priming[2] | — |
| Processing technique (at SNF) | Resist Spray Coat (manual)[3] | — |
| Cleanliness group (at SNF) | "All"[1] | — |
| Configuration | — | Front side Alignment[4] |
| Trinocular Split Field Microscope | — | Dual 5X & 10X Objectives[4] |
| Exposure types | — | vacuum, hard, soft proximity contact[5] |
| Substrate size (max) | — | 4 inches in diameter[5] |
| Mask/substrate thickness capacity | — | 9.00 mm total[5] |
| Exposure optics | — | 400 nm[5] |
| Lamps | — | allowing sub-micron exposure in vacuum contact[5] |
| Photoresist tones | — | positive and negative[5] |
| Alignment type | — | topside only[5] |
| Minimum alignment mark separation (binocular) | — | 3.5 cm[5] |
| Typical pattern resolution | — | 1 µm[5] |
| Achievable alignment resolution | — | 1 µm[5] |
| Wafer sizes | — | 2, 3, 4, 12 inch[4] |
| Alignment features (as listed by reseller) | — | front side alignment; trinocular split field microscope with dual 5X & 10X objectives; video camera; high resolution alignment; Suss power supply[4] |
| Contact exposure modes | — | vacuum, hard, soft, proximity contact[5] |
| Substrate size | — | up to 4 inches in diameter[5] |
| Maximum mask and wafer total thickness | — | 9.00 mm[5] |
| Adjustment accuracy (X, Y, theta) | — | below 1 µm[5] |
| Exposure optics wavelength | — | 400 nm[5] |
| Topside alignment | — | yes[5] |
| Wafer sizes (listing) | — | 2, 3, 4, 12 inch[4] |
| Alignment type (listing) | — | Front side[4] |
| Microscope | — | Trinocular Split Field with Dual 5X & 10X Objectives[4] |
| Camera | — | Video Camera[4] |
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