Comparison ledger
Disco DFL7340-stealth-dicer, EV Group 850 LT SOI Fusion Wafer, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 850 LT SOI Fusion WaferEV Group | |
|---|---|---|
| OEM | Disco | EV Group |
| Category | Packaging & Bonding | Packaging & Bonding |
| Wafer size | 200mm | 200mm |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Disco DFL7340-stealth-dicer | EV Group 850 |
| Specifications | ||
| OEM | Disco[1] | — |
| Model | DFL7340[1] | — |
| Process area | Packaging[1] | — |
| Compatible materials | Dedicated to dicing Si wafers only[1] | — |
| Laser engine wavelength | λ = 1342 nm[1] | — |
| Maximum sample diameter | 200 mm[1] | — |
| Dicing orientation | Topside or backside (through tape) dicing possible[1] | — |
| Si resistivity requirement | ρ > 0.01 Ω•cm[1] | — |
| Surface roughness requirement | Dicing streets must be smooth (mirror polish) on the surface where the laser is incident[1] | — |
| Street clearance requirement | Wafer must be metal-free in a width 0.4 × substrate thickness, centred on the dicing street[1] | — |
| Configuration | — | Fully-Automatic[2] |
| Wafer size | — | Suitable for wafer sizes up to 8"/200mm wafers[2] |
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