Comparison ledger
CEE 1000 Hot Plate, YES PB12-2P-CP, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | PB12-2P-CPYES | |
|---|---|---|
| OEM | CEE | YES |
| Category | Thermal / Diffusion | Thermal / Diffusion |
| Wafer size | — | 12 in. |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | CEE 1000 Hot Plate | YES PB12-2P-CP |
| Cited variants | — |
|
| Specifications | ||
| Configuration | 4"[2] | — |
| Type | Hot Plate[2] | — |
| Wafer Size | 4 inch[2] | — |
| Model | — | PB12-2P-CP[1] |
| Wafer capacity | — | 2 cassettes of 12 in. wafers[1] |
| Chamber configuration | — | single compartment[1] |
| Chamber size | — | 14.5 in. x 21 in. x 27 in. deep chamber[1] |
| Controller | — | CTC Controller with Color Touchscreen[1] |
| Included package | — | Cooling Package[1] |
| Chamber dimensions (OEM source) | — | 14.5 in. x 21 in. x 27 in. deep chamber[1] |
| Chamber dimensions (secondary source) | — | 21 in. barrel x 40.97 in. deep[3] |
| Maximum temperature | — | 450 °C[1] |
| Recipe capability | — | 8 recipes with up to 16 ramps and dwells each[1] |
| N2 flow rate | — | 1 SCFM[3] |
| Chamber cleanliness | — | Class One[3] |
| Electrical requirements | — | 208 V, 3 phase, 30 A, 50/60 Hz[3] |
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