Waferpedia

Comparison ledger

B2versusEVG 150

Brewer Science B2, EV Group EVG 150, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
B2Brewer Science
EVG 150EV Group
OEMBrewer ScienceEV Group
CategoryLithographyLithography
Wafer size100mm100mm
Process nodeDUV—
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation—i-line
FamilyBrewer Science B2EV Group EVG 150
Specifications
TypeDevelopable BARC[1]—
Name in ACT-8 process listB2 DUV42P[1]—
Configured wafer size on ACT-8100 mm (4") wafers[1]—
Tool type—Modular cluster tool for coating and development of i-line photoresists[2]
Loading/unloading ports—Two loading/unloading ports: one cassette for coating and one cassette for development[2]
Wafer centering—Optical wafer centering station[2]
Spin-coating modules—Three spin-coating modules: coater A, coater B, and coater C[2]
Coater A use—Low-viscosity photoresist[2]
Coater B use—High-viscosity photoresist[2]
Coater C use—Bottom layers[2]
Development module—One development module with puddle and spray options[2]
Hotplates and coolplates—Three stacks of hotplates (8 in total) and coolplates (3 in total)[2]
HMDS priming—Additional HMDS-priming module[2]
Robot—Dual end effector robot[2]
Wafer handling—Standard SEMI-wafers of 100 mm and 150 mm diameter[2]
Substrate types—Opaque wafers (silicon, SOI) or transparent wafers (glass, fused-silica, sapphire)[2]
Process stability features—Airborne molecular contamination (AMC) filter and active control of chamber and resist/developer lines temperature[2]
Available photoresists—AZ ECI 3007, AZ ECI 3027, AZ 1512 HS, AZ nLOF 2020, AZ nLOF 2070, MC PC62E[2]
Available bottom layers—LOR 5A, LOR 15C, XHRiC-16 II[2]
Surface preparation options—HMDS, dehydrate, or none[2]
Solvent clean options—Standard or edge bead removal (EBR)[2]
Developer chemistries—AZ 726 MIF, AZ 400K 1:3.5, AZ developer III[2]
wafer diameter—100mm and 150mm[2]
loading/unloading ports—Two (one cassette for coating, one for development)[2]
wafer centering station—Optical wafer centering station[2]
spin-coating modules—Three (coater A: low-viscosity PR, coater B: high-viscosity PR, coater C: bottom layers)[2]
development module—One, with both puddle and spray options[2]
hotplates—Three stacks, 8 in total[2]
coolplates—Three stacks, 3 in total[2]
additional module—HMDS-priming module[2]
wafer types—Opaque (silicon, SOI) or transparent (glass, fused-silica, sapphire)[2]
process enhancement—AMC filter and active control of chamber and resist/developer line temperature[2]
Wafer sizes—100mm and 150mm diameter[2]
Loading ports—Two loading/unloading ports[2]
Hotplates—Three stacks, 8 total[2]
Coolplates—Three total[2]
HMDS-priming module—Included[2]
Wafer types—Opaque (silicon, SOI) and transparent (glass, fused-silica, sapphire)[2]
AMC filter—Airborne molecular contamination filter on top[2]
Temperature control—Active control of chamber and resist/developer lines temperature[2]
Photoresists available—AZ ECI 3007, AZ ECI 3027, AZ 1512 HS, AZ nLOF 2020, AZ nLOF 2070, MC PC62E; bottom layers: LOR 5A, LOR 15C, XHRiC-16[2]
Wafer size—100mm and 150mm[2]
Photoresist type—i-line[2]
Process enhancement—Airborne molecular contamination filter and active control of chamber and resist/developer line temperature[2]
Priming module—Additional HMDS-priming module[2]
Wafer diameter—100 mm and 150 mm diameter[2]

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Sources (2)Every fact above is drawn from these public sources
  1. [1]epfl.chepfl.ch
  2. [2]epfl.chepfl.ch