Comparison ledger
Blanchard 20 36 Surface, Disco DFL7340, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 20 36 SurfaceBlanchard | DFL7340Disco |
|---|---|---|
| OEM | Blanchard | Disco |
| Category | Dicing & Grinding | Dicing & Grinding |
| Wafer size | — | 200mm |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Blanchard 20 36 Surface | Disco DFL7340 |
| Specifications | ||
| Configuration | With new Elecro-Matic Neutrol II Magnetic Chuck Control[1] | — |
| Magnetic Chuck Control | Electro-Matic Neutrol II[1] | — |
| Model | — | DFL7340[2] |
| OEM | — | Disco[2] |
| Process area | — | Packaging[2] |
| Compatible materials | — | Si wafers only[2] |
| Stealth dicing engine | — | SDE03 engine with λ = 1342 nm[2] |
| Maximum sample diameter | — | 200 mm[2] |
| Dicing orientation | — | Topside or backside (through tape) dicing possible[2] |
| Category | — | Packaging & Bonding[3] |
| Process | — | Laser stealth dicing of Si wafers[4] |
| Compatible material | — | Si wafers only[2] |
| Laser engine wavelength | — | λ = 1342 nm[2] |
| Process wavelength | — | IR[4] |
| Feeding speed | — | 1.0–1000 mm/s[4] |
| Position accuracy | — | 3 µm[4] |
| Surface roughness requirement | — | Dicing streets must be smooth (mirror polish) on the surface where the laser is incident[3] |
| Street clearance requirement | — | Wafer must be metal-free in a width of 0.4 × substrate thickness, centered on the dicing street[3] |
| Si resistivity requirement | — | ρ > 0.01 Ω•cm[3] |
| Automation mode | — | Fully automated mode[4] |
| Backside alignment | — | IR camera for back side alignment[4] |
| Vendor | — | Disco[2] |
| Laser wavelength | — | 1342 nm (IR)[2] |
| Laser type | — | ns-pulsed near infrared laser[5] |
| Wafer sizes supported | — | 200mm wafers or smaller (6in, 4in, 3in, coupon, wafer quarter)[4] |
| Maximum wafer thickness | — | Up to 1.5 mm thick wafers[4] |
| Dicing sides | — | Topside or backside (through tape) dicing possible[2] |
| IR camera for back side alignment | — | IR camera for back side alignment[4] |
| Feeding speed, X-axis & Y-axis | — | 1.0 – 1000 mm/s[4] |
| Position accuracy, X-axis & Y-axis | — | 3 µm[4] |
| Operation mode | — | Fully automated mode[4] |
| Process purpose | — | Laser stealth dicing of Si wafers[4] |
| At the nanoFAB | — | Staff processing only; user training not offered on this tool[5] |
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