Comparison ledger
Blanchard 18 D Surface, Takatori WSD K 3, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 18 D SurfaceBlanchard | WSD K 3Takatori |
|---|---|---|
| OEM | Blanchard | Takatori |
| Category | Dicing & Grinding | Dicing & Grinding |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Blanchard 18 D Surface | Takatori WSD K 3 |
| Specifications | ||
| Voltage | 416 V[1] | — |
| Phase | 3 Phase[1] | — |
| Cycles | 50[1] | — |
| Control Voltage | 110[1] | — |
| Make | Blanchard[1] | — |
| Model | 18 D[1] | — |
| Asset # | 153970[1] | — |
| Power | 416 V, 3 phase[1] | — |
| Configuration | — | Capable of handling substrates that include:[3] |
| Capable substrates | — | Silicon Carbide (SiC), Sapphire, Quartz crystal and optical materials, Compound semiconductors (GaAs, GaN, InP)[3] |
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